STPS20170CFP STMicroelectronics, STPS20170CFP Datasheet - Page 3

• Manufacturer Part Number: STPS20170CFP
• Description: DIODE SCHOTTKY 170V TO-220FPAB
• Manufacturer: STMicroelectronics

Specifications of STPS20170CFP

• Voltage - Forward (vf) (max) @ If: 900mV @ 10A
• Current - Reverse Leakage @ Vr: 15µA @ 170V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 170V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-7549-5; STPS20170CFP

Figure 1: Average forward power dissipation
versus average forward current (per diode)
Figure
derating versus pulse duration
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB, D
10
150
125
100
9
8
7
6
5
4
3
2
1
0
0.001
75
50
25
0.01
1.E-03
0
0
P
0.1
1
0.01
F(AV)
I (A)
M
P
P
ARM
I
1
M
ARM p
(W)
(1µs)
3:
(t )
2
δ
=0.5
t
0.1
3
Normalized
δ = 0.05
1.E-02
4
5
1
I
F(AV)
δ = 0.1
t (µs)
p
t(s)
6
(A)
δ = 0.2
7
avalanche
10
1.E-01
8
2
δ = 0.5
PAK, I
9
δ
100
=tp/T
10
δ = 1
T
T =125°C
2
T =50°C
T =75°C
C
C
power
PAK)
C
11
tp
1.E+00
1000
12
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
Figure
derating versus junction temperature
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220FPAB)
12
11
10
100
1.2
0.8
0.6
0.4
0.2
9
8
7
6
5
4
3
2
1
0
90
80
70
60
50
40
30
20
10
1.E-03
1
0
0
0
I
F(AV)
25
I (A)
P
M
P
ARM
δ
=tp/T
I
ARM p
M
(A)
(25°C)
25
4:
(t )
T
δ
=0.5
t
50
tp
Normalized
50
R
1.E-02
th(j-a)
=15°C/W
75
T
75
amb
T (°C)
t(s)
R
j
th(j-a)
(°C)
R
=R
th(j-a)
100
th(j-c)
avalanche
100
=R
(TO-220FPAB)
th(j-c)
1.E-01
(TO-220AB, I PAK and D PAK)
STPS20170C
125
125
2
150
T =125°C
T =50°C
T =75°C
C
power
C
C
2
1.E+00
150
3/8
175