M1MA142WKT1G ON Semiconductor, M1MA142WKT1G Datasheet - Page 2

• Manufacturer Part Number: M1MA142WKT1G
• Description: DIODE SW DUAL SS CC 80V SOT-323
• Manufacturer: ON Semiconductor

Specifications of M1MA142WKT1G

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 75V
• Current - Average Rectified (io) (per Diode): 100mA (DC)
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 3ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Product: Switching Diodes
• Peak Reverse Voltage: 80 V
• Forward Continuous Current: 0.15 A
• Max Surge Current: 0.75 A
• Configuration: Dual Common Cathode
• Recovery Time: 3 ns
• Forward Voltage Drop: 1.2 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M1MA142WKT1G; M1MA142WKT1GOSTR

2. t
ELECTRICAL CHARACTERISTICS
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time (Figure 1)
rr
Test Circuit
Characteristic
(T
M1MA141WKT1
M1MA142WKT1
M1MA141WKT1
M1MA142WKT1
A
= 25C)
http://onsemi.com
I
R
F
V
L
= 10 mA, V
R
= 100 Ω, I
= 0, f = 1.0 MHz
I
2
I
F
Condition
R
V
V
= 100 mA
R
R
= 100 mA
= 35 V
= 75 V
rr
R
= 0.1 I
= 6.0 V,
R
Symbol
(Note 2)
V
C
V
I
t
R
rr
F
R
D
Min
40
80
--
--
--
--
Max
0.1
1.2
2.0
3.0
--
mAdc
Unit
Vdc
Vdc
pF
ns