NCR169D ON Semiconductor, NCR169D Datasheet

NCR169D

Manufacturer Part Number

NCR169D

Description

SCRs 400V 800mA

Manufacturer

ON Semiconductor

Datasheet

1.NCR169D.pdf (8 pages)

Specifications of NCR169D

Mounting Style

Through Hole

Package / Case

TO-92-3 (TO-226)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 8
Download datasheet (70Kb)

NCR169D

General Purpose

Sensitive Gate

Silicon Controlled Rectifier

Reverse Blocking Thyristor

applications such as relay and lamp drivers, small motor controls, gate

drivers for larger thyristors, and sensing and detection circuits.

Supplied in a cost effective plastic TO-226AA package.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. V

MAXIMUM RATINGS

October, 2005 − Rev. 1

Peak Repetitive Off−State Voltage (Note 1.)

On-State RMS Current

Peak Non-Repetitive Surge Current

Circuit Fusing Consideration (t = 10 ms)

Forward Peak Gate Power

Forward Average Gate Power

Forward Peak Gate Current

Reverse Peak Gate Voltage

Operating Junction Temperature Range

Storage Temperature Range

Other Logic Circuits

Sensitive Gate Allows Direct Triggering by Microcontrollers and

On−State Current Rating of 0.8 Amperes RMS at 80°C

Surge Current Capability − 10 Amperes

Immunity to dV/dt − 20 V/μsec Minimum at 110°C

Glass-Passivated Surface for Reliability and Uniformity

Device Marking: NCR169D, Date Code

Pb−Free Packages are Available

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

60 Hz; Gate Open)

(1/2 Cycle, Sine Wave, 60 Hz,

@ Rate V

DRM

PNPN device designed for line-powered general purpose

= 25°C)

= *40 to 110°C, Sine Wave, 50 to

= 25°C, Pulse Width v 1.0

= 25°C, t = 20 ms)

= 25°C, Pulse Width v 1.0

= 80°C) 180° Conduction Angles

and V

RRM

and V

Rating

for all types can be applied on a continuous basis. Ratings

DRM

= 25°C unless otherwise noted)

Symbol

T(RMS)

G(AV)

DRM,

TSM

RRM

GRM

stg

−40 to

Value

0.415

0.10

400

150

110

0.8

0.1

1.0

5.0

Amps

Volts

Unit

Amp

Watt

Amp

°C

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

(TO−226AA)

WW = Work Week

(Note: Microdot may be in either location)

CASE 029

STYLE 10

ORDERING INFORMATION

0.8 AMPERES RMS

TO−92

= Assembly Location

= Wafer Lot

= Year

= Pb−Free Package

http://onsemi.com

PIN ASSIGNMENT

400 VOLTS

SCR

Publication Order Number:

Cathode

Anode

Gate

MARKING

DIAGRAM

ALYWWG

1 2 3

169D

NCR

NCR169D/D

Related parts for NCR169D

NCR169D Summary of contents

Page 1

... Surge Current Capability − 10 Amperes • Immunity to dV/dt − 20 V/μsec Minimum at 110°C • Glass-Passivated Surface for Reliability and Uniformity • Device Marking: NCR169D, Date Code • Pb−Free Packages are Available MAXIMUM RATINGS (T = 25°C unless otherwise noted) J Rating Peak Repetitive Off− ...

Page 2

... Critical Rate of Rise of On−State Current = μsec; diG/dt = 1.0 A/μsec, Igt = 20 mA *Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1 1000 Ohms included in measurement Does not include R in measurement. GK NCR169D (T = 25°C unless otherwise noted) C Symbol I DRM T = 25° 110° ...

Page 3

... Holding Current H 100 −40 −25 − JUNCTION TEMPERATURE (°C) J Figure 1. Typical Gate Trigger Current versus Junction Temperature NCR169D on state RRM RRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode − 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0 110 −40 − ...

Page 4

... Figure 3. Typical Holding Current versus Junction Temperature 120 110 100 30° 60° 0.1 0.2 0 RMS ON-STATE CURRENT (AMPS) T(RMS) Figure 5. Typical RMS Current Derating NCR169D 1000 100 110 −40 −25 − Figure 4. Typical Latching Current versus 10 MAXIMUM @ 180° 90° 120° ...

Page 5

... Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive more than 1 consecutive missing component is permitted tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. Splices will not interfere with the sprocket feed holes. NCR169D H2A H2A W2 ...

Page 6

... NCR169DRLRM Flat side of TO92 and adhesive tape visible NCR169DRLRMG Flat side of TO92 and adhesive tape visible NCR169DRLRP Flat side of TO92 and adhesive tape visible NCR169DRLRPG Flat side of TO92 and adhesive tape visible †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 7

... PACKAGE DIMENSIONS SEATING K PLANE NCR169D TO−92 (TO−226AA) CASE 029−11 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM SECTION X−X STYLE 10: http://onsemi.com ...

Page 8

... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NCR169D/D ...

Related keywords

NCR169D datasheet
NCR169D data sheet
NCR169D pdf datasheet
NCR169D component
NCR169D part
NCR169D distributor
NCR169D RoHS
NCR169D datasheet download