BAV99W,115 NXP Semiconductors, BAV99W,115 Datasheet - Page 4
![DIODE SW DBL 75V 150MA HS SOT323](/photos/5/24/52427/568-umt3_sot-323_sc-70_sot323_sml.jpg)
BAV99W,115
Manufacturer Part Number
BAV99W,115
Description
DIODE SW DBL 75V 150MA HS SOT323
Manufacturer
NXP Semiconductors
Specifications of BAV99W,115
Package / Case
SC-70-3, SOT-323-3
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
500nA @ 80V
Current - Average Rectified (io) (per Diode)
130mA (DC)
Voltage - Dc Reverse (vr) (max)
100V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.15 A
Max Surge Current
4 A
Configuration
Dual Series
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1625-2
934026010115
BAV99W T/R
934026010115
BAV99W T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAV99W,115
Manufacturer:
NXP Semiconductors
Quantity:
14 400
Part Number:
BAV99W,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAV99_SER
Product data sheet
Table 7.
[1]
[2]
[3]
Table 8.
T
[1]
[2]
Symbol
R
R
Symbol
Per diode
V
I
C
t
V
R
rr
amb
F
FR
th(j-a)
th(j-sp)
d
Single diode loaded.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Soldering points at pins 2, 3, 5 and 6.
When switched from I
When switched from I
= 25
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
BAV99
BAV99W
BAV99
BAV99S
BAV99W
All information provided in this document is subject to legal disclaimers.
F
F
Rev. 8 — 18 November 2010
= 10 mA to I
= 10 mA; t
r
= 20 ns.
R
= 10 mA; R
I
f = 1 MHz; V
Conditions
I
I
I
V
V
V
V
F
F
F
F
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 25 V
= 80 V
= 25 V; T
= 80 V; T
Conditions
in free air
L
= 100 Ω; measured at I
j
j
R
= 150 °C
= 150 °C
= 0 V
[1][2]
High-speed switching diodes
[3]
[1]
[2]
BAV99 series
Min
-
-
-
-
-
Min
-
-
-
-
-
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
500
625
360
260
300
Max
715
855
1
1.25
30
0.5
30
50
1.5
4
1.75
Unit
K/W
K/W
K/W
K/W
K/W
Unit
mV
mV
V
V
nA
μA
μA
μA
pF
ns
V
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