BTA212B-800E /T3 NXP Semiconductors, BTA212B-800E /T3 Datasheet - Page 4
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BTA212B-800E /T3
Manufacturer Part Number
BTA212B-800E /T3
Description
Triacs THYR AND TRIACS
Manufacturer
NXP Semiconductors
Datasheet
1.BTA212B-800E118.pdf
(6 pages)
Specifications of BTA212B-800E /T3
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
105 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
10 mA
Holding Current (ih Max)
25 mA
Forward Voltage Drop
1.6 V @ 17 A
Mounting Style
SMD/SMT
Package / Case
SOT-404
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTA212B-800E,118
Philips Semiconductors
October 2003
Three quadrant triacs
guaranteed commutation
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
(T
3
2
1
0
IL(25 C)
-50
IGT(25°C)
IL(Tj)
IGT(Tj)
IH(25C)
IH(Tj)
Fig.7. Normalised gate trigger current
j
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
Tj/°C
Tj / C
50
Tj / C
50
50
100
100
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
T2+ G+
T2+ G-
T2- G-
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
10 3
10 2
10
Fig.10. Typical and maximum on-state characteristic.
1
Fig.11. Transient thermal impedance Z
20
dIcom/dt (A/ms)
0.001
40
30
20
10
commutating current dI
0.01
0
Fig.12. Minimum, critical rate of change of
0.1
0
10
10us
IT / A
1
Rs = 0.0316 Ohms
Vo = 1.175 V
Tj = 125 C
Tj = 25 C
Zth j-mb (K/W)
40
temperature, dV
0.5
0.1ms
BTA212B series D, E and F
60
unidirectional
pulse width t
1ms
1
tp / s
VT / V
10ms
1.5
com
80
com
typ
/dt = 10V/ s.
/dt versus junction
P
D
bidirectional
p
.
0.1s
Product specification
2
t p
100
max
th j-mb
2.5
1s
t
120
Rev 3.000
, versus
F TYPE
E TYPE
D TYPE
10s
T j (˚C)
3
140