2N6395 ON Semiconductor, 2N6395 Datasheet

2N6395

Manufacturer Part Number

2N6395

Description

SCRs 100V 12A

Manufacturer

ON Semiconductor

Datasheet

1.2N6395.pdf (5 pages)

Specifications of 2N6395

Breakover Current Ibo Max

100 A

Rated Repetitive Off-state Voltage Vdrm

100 V

Off-state Leakage Current @ Vdrm Idrm

0.01 mA

Forward Voltage Drop

2.2 V

Gate Trigger Voltage (vgt)

1.5 V

Gate Trigger Current (igt)

30 mA

Holding Current (ih Max)

40 mA

Mounting Style

Through Hole

Package / Case

TO-220-3

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

Part Number:

2N6395E

Manufacturer:

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2N6394 Series

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

motor controls, heating controls and power supplies.

Features

†Indicates JEDEC Registered Data

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. V

*For additional information on our Pb-Free strategy and soldering details, please

MAXIMUM RATINGS

April, 2008 - Rev. 7

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Peak Repetitive Off-State Voltage (Note 1)

50 to 60 Hz, Gate Open)

On‐State RMS Current

(180 Conduction Angles; T

Peak Non‐Repetitive Surge Current

(1/2 Cycle, Sine Wave, 60 Hz, T

Circuit Fusing (t = 8.3 ms)

Forward Peak Gate Power

(Pulse Width

Forward Average Gate Power

(t = 8.3 ms, T

Forward Peak Gate Current

(Pulse Width

Operating Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction-to-Case

Maximum Lead Temperature for Soldering

Purposes 1/8 from Case for 10 Seconds

Designed primarily for half‐wave ac control applications, such as

Parameter Uniformity and Stability

Resistance, High Heat Dissipation and Durability

Glass Passivated Junctions with Center Gate Geometry for Greater

Small, Rugged, Thermowatt Construction for Low Thermal

Blocking Voltage to 800 V

Pb-Free Packages are Available*

Semiconductor Components Industries, LLC, 2008

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

DRM

= -40 to 125 C, Sine Wave,

and V

RRM

1.0 ms, T

= 90 C)

Rating

for all types can be applied on a continuous basis. Ratings

† (T

= 90 C)

= 25 C unless otherwise noted)

Preferred Device

= 90 C)

2N6394

2N6395

2N6397

2N6399

Symbol

T(RMS)

G(AV)

DRM,

TSM

RRM

qJC

stg

-40 to +125

-40 to +150

Value

Max

100

400

800

100

260

0.5

2.0

Unit

C/W

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

ORDERING INFORMATION

2N639x = Device Code

12 AMPERES RMS

50 thru 800 VOLTS

http://onsemi.com

PIN ASSIGNMENT

CASE 221A

TO-220AB

= Pb-Free Package

= Assembly Location

= Year

= Work Week

STYLE 3

x = 4, 5, 7, or 9

SCRs

Publication Order Number:

Cathode

Anode

Gate

MARKING

DIAGRAM

2N639xG

AYWW

2N6394/D

Related parts for 2N6395

2N6395 Summary of contents

Page 1

... MAXIMUM RATINGS = 25 C unless otherwise noted) J Rating Peak Repetitive Off-State Voltage (Note -40 to 125 C, Sine Wave Hz, Gate Open) 2N6394 2N6395 2N6397 2N6399 On‐State RMS Current (180 Conduction Angles Peak Non‐Repetitive Surge Current (1/2 Cycle, Sine Wave Circuit Fusing (t = 8.3 ms) Forward Peak Gate Power 1 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS †Peak Repetitive Forward or Reverse Blocking Current (V = Rated Gate Open) AK DRM RRM ON CHARACTERISTICS †Peak Forward On-State Voltage (Note 2) (I †Gate Trigger Current (Continuous dc) (V † ...

Page 3

7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.4 1.2 2.0 2.8 3 INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) TH Figure 3. On-State Characteristics 1.0 0.7 0.5 ...

Page 4

... Figure 8. Typical Gate Trigger Voltage versus Temperature ORDERING INFORMATION Device 2N6394 2N6394G 2N6395 2N6395G 2N6397 2N6397G 2N6399 2N6399G 2N6399TG **For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 5

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada ...

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