TGF2022-60 TriQuint, TGF2022-60 Datasheet - Page 7

• Manufacturer Part Number: TGF2022-60
• Description: RF GaAs DC-20GHz 6.0mm Pwr pHEMT (0.35um)
• Manufacturer: TriQuint

Specifications of TGF2022-60

• Mounting Style: SMD/SMT
• Gate-source Breakdown Voltage: - 8 V
• Package / Case: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1031683

TriQuint Semiconductor Texas: Phone [phone] Fax [phone] [e-mail] www.triquint.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.
GATE
1.825 [0.072]
1.585 [0.062]
1.345 [0.053]
1.105 [0.044]
0.865 [0.034]
0.625 [0.025]
0.420 [0.017]
0.000 [0.000]
2.930 [0.115]
2.511 [0.099]
2.305 [0.091]
2.065 [0.081]
Units: millimeters (inches)
Thickness: 0.100 (0.004)
Chip edge to bond pad dimensions are shown to center of b
Chip size tolerance: +/- 0.051 (0.002)
GND IS BACKSIDE OF MMIC
Bond pads #1-8:
Bond pads #9-16: (Drain) 0.090 x 0.090 (0.004 x 0.004)
Bond pad #17:
Bond pad #18:
*Note: Bond pads #17 & 18 are alternate gate pads
that can be used for paralleling FETs.
Mechanical Drawing
1
8
7
6
5
4
3
2
(Gate)
(Vg*)
(Vg*)
17
18
10
11
12
13
14
15
16
9
0.090 x 0.090 (0.004 x 0.004)
0.090 x 0.090 (0.004 x 0.004)
0.090 x 0.090 (0.004 x 0.004)
2.322 [0.091]
0.608 [0.024]
DRAIN
Product Datasheet
TGF2022-60
September 7, 2007
Rev -
7