SD1407 STMicroelectronics, SD1407 Datasheet

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SD1407

Manufacturer Part Number

SD1407

Description

RF Bipolar Power NPN 28.0V 30MHz

Manufacturer

STMicroelectronics

Datasheets

1.SD1407.pdf (4 pages)

2.SD1407.pdf (4 pages)

Specifications of SD1407

Dc Collector/base Gain Hfe Min

10

Maximum Operating Temperature

+ 200 C

Mounting Style

SMD/SMT

Transistor Polarity

NPN

Configuration

Single

Maximum Operating Frequency

30 MHz

Collector- Emitter Voltage Vceo Max

36 V

Emitter- Base Voltage Vebo

4 V

Continuous Collector Current

20 A

Maximum Dc Collector Current

20 A

Power Dissipation

270 W

Package / Case

M174

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

BOSTOCK HK LIMITED

Part Number:

SD1407

Manufacturer:

ST

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Part Number:

SD1407 -MP

Manufacturer:

ST

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Part Number:

SD1407-11

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ST

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Part Number:

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Part Number:

SD1407-16

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ST

0

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DESCRIPTION

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The SD1407 is a 28 V epitaxial silicon NPN planar

transistor designed primarily for SSB communica-

tions. This device utilizes state-of-the-art diffused

emitter ballasting for improved ruggedness and

reliability.

ABSOLUTE MAXIMUM RATINGS (T

THERMAL DATA

October 1992

30 MHz

28 VOLTS

IMD 30 dB

COMMON EMITTER

GOLD METALLIZATION

P

OUT

Symbol

R

P

V

V

V

T

TH(j-c)

DISS

CBO

CEO

T

EBO

STG

I

C

J

125 W MIN. WITH 15 dB GAIN

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

Power Dissipation

Junction Temperature

Storage Temperature

Junction-Case Thermal Resistance

Parameter

RF & MICROWAVE TRANSISTORS

case

25 C)

ORDER CODE

HF SSB APPLICATIONS

SD1407

1. Collector

2. Emitter

PIN CONNECTION

.500 4LFL (M174)

epoxy sealed

65 to +150

Value

+200

0.65

270

4.0

65

36

20

3. Base

4. Emitter

BRANDING

SD1407

1407

Unit

C/W

W

V

V

V

A

C

C

1/4

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