BLF6G27LS-135 NXP Semiconductors, BLF6G27LS-135 Datasheet - Page 11

• Manufacturer Part Number: BLF6G27LS-135
• Description: RF MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27LS-135

• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.135 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 34 A
• Maximum Operating Temperature: + 200 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27LS-135,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 12.
BLF6G27-135_BLF6G27LS-135_2
Product data sheet
Document ID
BLF6G27-135_BLF6G27LS-135_2 20080526
BLF6G27-135_BLF6G27LS-135_1 20080221
Revision history
Table 11.
Acronym
CCDF
CDMA
CW
EVM
FCH
FFT
IBW
IS-95
LDMOS
LDMOST
N-CDMA
PAR
PUSC
RF
SMD
VSWR
WCS
WiMAX
Release date Data sheet status
Abbreviations
Description
Complementary Cumulative Distribution Function
Code Division Multiple Access
Continuous Wave
Error Vector Magnitude
Frame Control Header
Fast Fourier Transform
Instantaneous BandWidth
CDMA Interim Standard 95
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Narrowband Code Division Multiple Access
Peak-to-Average power Ratio
Partial Usage of SubChannels
Radio Frequency
Surface Mounted Device
Voltage Standing-Wave Ratio
Wireless Communications Service
Worldwide Interoperability for Microwave Access
BLF6G27-135; BLF6G27LS-135
Rev. 02 — 26 May 2008
Product data sheet
Preliminary data sheet -
Change notice Supersedes
-
WiMAX power LDMOS transistor
BLF6G27-135_
BLF6G27LS-135_1
-
© NXP B.V. 2008. All rights reserved.
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