SDP20S30 Infineon Technologies, SDP20S30 Datasheet
SDP20S30
Specifications of SDP20S30
SDP20S30X
SDP20S30XK
SDP20S30XTIN
SDP20S30XTIN
SP000013625
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Related parts for SDP20S30
SDP20S30 Summary of contents
Page 1
... Symbol I =100° =25° Page 1 thinQ! SiC Schottky Diode Product Summary V RRM P-TO220 Marking D20S30 Value FRMS 36 FSM 45 FRM 100 FMAX 6 300 RRM 300 RSM 65 tot T -55... +175 j , stg SDP20S30 V 300 23 nC 2x10 A Unit A A² °C 2009-11-25 ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 1.5 Symbol R thJC = 25 °C, unless otherwise specified (per leg) j Symbol Page 2 SDP20S30 Values Unit min. typ. max 2.3 K/W Values Unit min. typ. ...
Page 3
... Switching time =200V, I =10A =-200A/µ Total capacitance =0V, T =25°C, f =1MHz =150V, T =25°C, f =1MHz =300V, T =25°C, f =1MHz Rev. 1 °C, unless otherwise specified (per leg) j Symbol Q c =150° =150° Page 3 SDP20S30 Values Unit min. typ. max n. 600 - - 2009-11-25 ...
Page 4
... Rev. 1.5 2 Diode forward current (per leg parameter °C 180 Typ. forward power dissipation vs. average forward current (per leg) P F(AV -40°C 25°C 12 100°C 125°C 150°C 1.6 1 Page 4 SDP20S30 ) C ≤ 175 ° 100 120 140 =100° ...
Page 5
... Transient thermal impedance (per leg) Z thJC parameter : K 150°C 125°C 100°C 25° 200 V 300 Typ. C stored energy (per leg) E =f(V C µ Page SDP20S30 single pulse - 2.5 1 100 150 200 SDP20S30 D = 0.50 0.20 0.10 0.05 0.02 0. 300 V R 2009-11-25 ...
Page 6
... Typ. capacitive charge vs. current slope (per leg parameter 150 ° *0 100 200 300 400 500 600 700 800 Rev. 1 A/µs 1000 di /dt F Page 6 SDP20S30 2009-11-25 ...
Page 7
... P-TO220-3-1, P-TO220-3-21 Rev. 1.5 Page 7 SDP20S30 2009-11-25 ...
Page 8
... Rev. 1.5 Page 8 SDP20S30 2009-11-25 ...