BLF573S NXP Semiconductors, BLF573S Datasheet - Page 3

RF MOSFET Power 300W, HF-500MHz

BLF573S

Manufacturer Part Number
BLF573S
Description
RF MOSFET Power 300W, HF-500MHz
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF573S

Minimum Operating Temperature
- 65 C
Mounting Style
Screw
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
0.09 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
11 V
Continuous Drain Current
42 A
Maximum Operating Temperature
+ 225 C
Package / Case
LDMOST-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934062175112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF573S
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLF573S
Manufacturer:
M/A-COM
Quantity:
5 000
NXP Semiconductors
6. Characteristics
BLF573S_2
Product data sheet
Table 6.
T
Table 7.
Mode of operation: CW; f = 225 MHz; RF performance at V
unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
V
V
V
I
I
I
g
R
C
C
C
Symbol Parameter
G
RL
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
DS(on)
rs
iss
oss
p
= 25 C unless otherwise specified.
in
drain-source breakdown voltage V
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
input capacitance
output capacitance
power gain
input return loss
drain efficiency
DC characteristics
RF characteristics
Rev. 02 — 17 February 2009
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
Conditions
P
P
P
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
GS
GS
L
L
L
= 12.49 A
= 300 W
= 300 W
= 300 W
= 10 V; I
= 50 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
GS(th)
GS(th)
D
DS
DS
DS
DS
D
D
D
= 3.75 mA
+ 3.75 V;
+ 3.75 V;
DS
HF / VHF power LDMOS transistor
= 375 mA
= 900 mA
= 18.75 A
DS
= 50 V
= 50 V;
= 50 V;
= 50 V;
= 0 V
= 50 V; I
Dq
Min
110
1.25
1.45
-
44
-
-
-
-
-
-
Min
26
10
67
= 900 mA; T
BLF573S
© NXP B.V. 2009. All rights reserved.
Typ
-
1.7
1.95
-
56
-
20
0.09
2.3
300
103
Typ
27.2
13
70
case
Max
-
2.25
2.45
4.2
-
420
-
-
-
-
-
Max
28.4
-
-
= 25 C;
3 of 14
Unit
V
V
V
A
nA
S
pF
pF
pF
Unit
dB
dB
%
A

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