BFG424F T/R NXP Semiconductors, BFG424F T/R Datasheet - Page 8

• Manufacturer Part Number: BFG424F T/R
• Description: RF Bipolar Small Signal NPN 25GHZ WIDEBAND TRANSISTOR
• Manufacturer: NXP Semiconductors

Specifications of BFG424F T/R

• Dc Collector/base Gain Hfe Min: 50
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25000 MHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.03 A
• Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG424F,115

Philips Semiconductors
BFG424F_1
Product data sheet
Fig 11. Common emitter forward transmission coefficient (s
Fig 12. Common emitter input reflection coefficient (s
V
V
CE
CE
= 2 V; I
= 2 V; I
180
180
C
C
= 25 mA
= 25 mA; Z
50
0
Rev. 01 — 21 March 2006
100 MHz
+0.2
135
135
135
135
0.2
40
o
0.2
= 50
30
+0.5
0.5
20
0.5
10
12 GHz
12 GHz
+1
90
90
90
90
0
1
1
2
22
NPN 25 GHz wideband transistor
); typical values
+2
2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
21
5
100 MHz
); typical values
45
45
45
45
10
001aad828
001aad827
+5
5
0
0
BFG424F
1.0
0.8
0.6
0.4
0.2
0
1.0
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