BAW56 Fairchild Semiconductor, BAW56 Datasheet
BAW56
Manufacturer Part Number
BAW56
Description
DIODE SS 85V 200MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BAW56.pdf
(2 pages)
Specifications of BAW56
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
2.5µA @ 70V
Current - Average Rectified (io) (per Diode)
200mA
Voltage - Dc Reverse (vr) (max)
85V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAW56FSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAW56
Manufacturer:
PAN-J
Quantity:
54 000
Part Number:
BAW56
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BAW56 E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BAW56 E6767
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BAW56 T/R
Manufacturer:
PANJIT
Quantity:
10 338
Company:
Part Number:
BAW56(A1)
Manufacturer:
ABEL
Quantity:
2 528
Part Number:
BAW56+215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BAW56,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Company:
Part Number:
BAW56-7
Manufacturer:
DIODES
Quantity:
2 922
Company:
Part Number:
BAW56-7-F
Manufacturer:
DIODES
Quantity:
12 000
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics
Small Signal Diode
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Symbol
Absolute Maximum Ratings*
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
stg
J
RRM
D
R
F
T
JA
3
SOT-23
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
1
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
2
Parameter
Parameter
T
A
= 25°C unless otherwise noted
BAW56
T
A
= 25°C unless otherwise noted
1
A1
I
I
I
I
I
V
V
V
V
I
R
R
F
F
F
F
F
R
R
R
R
L
= 1.0 mA
= 10 mA
= 50 mA
= 150 mA
= I
= 5.0 A
3
= 70 V
= 25 V, T
= 70 V, T
= 0, f = 1.0 MHz
= 100
Test Conditions
R
= 10 mA, I
2
A
A
= 150 C
= 150 C
RR
= 1.0 mA,
Connection Diagram
-55 to +150
Min
Value
Value
85
200
150
350
357
1.0
2.0
85
1
3
Max
1.25
715
855
1.0
2.5
2.0
6.0
30
50
2
Units
Units
Units
mW
mA
C/W
V
A
A
C
C
mV
mV
pF
ns
V
V
V
A
A
A
BAW56, Rev. C
Related parts for BAW56
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
BAW56 Summary of contents
Page 1
... A Test Conditions 150 150 150 1.0 MHz mA 1.0 mA 100 L Connection Diagram Value Units 85 V 200 mA 1.0 A 2.0 A -55 to +150 C 150 C Value Units 350 mW 357 C/W Min Max Units V 85 715 mV 855 mV 1.0 V 1. 2.0 pF 6.0 ns BAW56, Rev. C ...
Page 2
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...