FEP16DTA Fairchild Semiconductor, FEP16DTA Datasheet
FEP16DTA
Manufacturer Part Number
FEP16DTA
Description
DIODE FAST 200V 8A NEG TO220AB
Manufacturer
Fairchild Semiconductor
Datasheet
1.FEP16JT.pdf
(3 pages)
Specifications of FEP16DTA
Voltage - Forward (vf) (max) @ If
950mV @ 8A
Current - Reverse Leakage @ Vr
10µA @ 200V
Current - Average Rectified (io) (per Diode)
8A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Anode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Anode
Reverse Voltage
200 V
Forward Voltage Drop
0.95 V @ 8 A
Recovery Time
35 ns
Forward Continuous Current
16 A @ Ta=100C
Max Surge Current
200 A
Reverse Current Ir
10 uA
Power Dissipation
8.33 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FEP16DTA
Manufacturer:
GS
Quantity:
10 000
Company:
Part Number:
FEP16DTA
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FEP16DTA
Manufacturer:
TSC/台半
Quantity:
20 000
2001 Fairchild Semiconductor Corporation
Features
•
•
•
•
• Average Forward Current Rating at 16A (8A per Diode).
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
*
Thermal Characteristics
Electrical Characteristics
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Symbol
P
R
R
High reliability.
Low forward voltage drop.
High surge current capacity.
High current capability.
V
I
I
T
T
V
t
I
C
F(AV)
FSM
D
rr
R
stg
J
RRM
JA
JL
F
T
Forward Voltage @ 8.0A
Reverse Recovery Time
Reverse Current @ rated V
Total Capacitance
Maximum Repetitive Reverse
Voltage
Average Rectified Forward Current,
Non-repetitive Peak Forward Surge
Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
I
F
.375 " lead length @ T
8.3 ms Single Half-Sine-Wave
V
= 0.5 A, I
R
= 4.0. f = 1.0 MHz
T
T
A
A
Parameter
Parameter
= 25 C
= 100 C
R
= 1.0 A, I
Parameter
FEP16AT - FEP16JT
RR
A
= 0.25 A
= 100 C
R
1
2
T
3
A
= 25°C unless otherwise noted
T
A
16AT
16AT
= 25°C unless otherwise noted
50
TO-220AB
16BT
100
16BT
0.95
35
16CT
16CT 16DT
150
85
16DT
200
-55 to +150
-55 to +150
Device
Value
200
500
16
10
16FT
16FT
300
Value
8.33
2.2
15
1.3
16GT
16GT
400
50
PIN 1
PIN 3
PIN 1
PIN 3
PIN 1
PIN 3
16HT
500
16HT
Positive CT
Negative CT
Doubler
Suffix "A"
Suffix "D"
1.5
60
16JT
FEP16AT - FEP16JT, Rev. C
600
16JT
CASE
PIN 2
CASE
PIN 2
CASE
PIN 2
-
AC
+
Units
Units
Units
V
A
A
pF
ns
C
C
C/W
C/W
V
W
A
A
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Datasheet:
FEP16DTA Summary of contents
Page 1
... Reverse Recovery Time 0 1 Reverse Current @ rated 100 Total Capacitance 4. 1.0 MHz R 2001 Fairchild Semiconductor Corporation TO-220AB T = 25°C unless otherwise noted A 16AT 16BT 16CT 16DT 50 100 150 200 = 100 C A -55 to +150 -55 to +150 T = 25°C unless otherwise noted A 16AT ...
Page 2
... Forward Voltage, V Figure 3. Forward Voltage Characteristics 50 50 NONINDUCTIVE NONINDUCTIVE DUT 50V (approx) 50 NONINDUCTIVE Reverse Recovery Time Characterstic and Test Circuit Diagram 2001 Fairchild Semiconductor Corporation 200 160 120 125 150 175 1 Figure 2. Non-Repetitive Surge Current 1000 100 10 1 0.1 1 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...