FEP30GP-E3/45 Vishay, FEP30GP-E3/45 Datasheet
FEP30GP-E3/45
Manufacturer Part Number
FEP30GP-E3/45
Description
DIODE FAST DUAL 30A 400V TO-247A
Manufacturer
Vishay
Specifications of FEP30GP-E3/45
Diode Type
Standard
Lead Free Status
Contains lead
Voltage - Forward (vf) (max) @ If
1.3V @ 15A
Current - Reverse Leakage @ Vr
10µA @ 400V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
400V
Reverse Recovery Time (trr)
50ns
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-3P-3, TO-247-3
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
400 V
Forward Voltage Drop
1.3 V @ 15 A
Recovery Time
50 ns
Forward Continuous Current
30 A
Max Surge Current
300 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Repetitive Reverse Voltage Vrrm Max
400V
Forward Current If(av)
30A
Forward Voltage Vf Max
1.3V
Reverse Recovery Time Trr Max
50ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
FEP30GP
FEP30GP
FEP30GP/45
FEP30GP/45
FEP30GP
FEP30GP/45
FEP30GP/45
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FEP30GP-E3/45
Manufacturer:
Vishay Semiconductors
Quantity:
63
Document Number: 88597
Revision: 08-Apr-10
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Operating storage and temperature range
C
= 100 °C
T
V
J
I
I
F(AV)
FSM
RRM
V
max.
t
rr
F
TO-247AD (TO-3P)
PIN 1
PIN 3
Dual Common Cathode Ultrafast Rectifier
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
A
= 25 °C unless otherwise noted)
PIN 2
CASE
1
0.95 V, 1.3 V, 1.5 V
2
50 V to 600 V
35 ns, 50 ns
3
150 °C
300 A
30 A
SYMBOL
T
J
V
V
I
I
V
, T
F(AV)
FSM
RRM
RMS
DC
STG
30AP
FEP
50
35
50
30BP
FEP
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low thermal resistance
• High forward surge capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC and
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, dc-to-dc
converters, and other power switching application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
100
100
70
WEEE 2002/96/EC
30CP
FEP
150
105
150
DiodesEurope@vishay.com
Vishay General Semiconductor
30DP
FEP
- 55 to + 150
FEP30AP thru FEP30JP
200
140
200
300
30
30FP
FEP
300
210
300
30GP
FEP
400
280
400
30HP
FEP
500
350
500
www.vishay.com
30JP
FEP
600
420
600
UNIT
°C/W
A
A
V
V
V
1
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FEP30GP-E3/45 Summary of contents
Page 1
... V 50 100 150 RRM 105 RMS V 50 100 150 DC I F(AV) I FSM STG FEP30AP thru FEP30JP Vishay General Semiconductor FEP FEP FEP FEP 30DP 30FP 30GP 30HP 30JP 200 300 400 500 140 210 280 350 200 300 400 500 30 300 - 150 www ...
Page 2
... FEP30AP thru FEP30JP Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T TEST PARAMETER CONDITIONS Maximum instantaneous 15.0 A forward voltage per diode °C Maximum DC reverse current C at rated DC blocking voltage per diode T = 100 ° 0 Maximum reverse recovery time per diode Typical junction capacitance 4 ...
Page 3
... PIN 2 PIN 1 PIN 3 CASE FEP30AP thru FEP30JP Vishay General Semiconductor ° 1.0 MHz sig 400 V 500 V to 600 V 0 Reverse Voltage (V) Fig Typical Junction Capacitance Per Diode ...
Page 4
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...