STPS10L45CT STMicroelectronics, STPS10L45CT Datasheet - Page 3

• Manufacturer Part Number: STPS10L45CT
• Description: DIODE SCHOTTKY 45V 2X5A TO-220AB
• Manufacturer: STMicroelectronics

Specifications of STPS10L45CT

• Voltage - Forward (vf) (max) @ If: 530mV @ 5A
• Current - Reverse Leakage @ Vr: 150µA @ 45V
• Current - Average Rectified (io) (per Diode): 5A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

STPS10L45C
Figure 1.
Figure 3.
Figure 5.
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
0.001
90
80
70
60
50
40
30
20
10
0.01
0
0.1
1E-3
0.0
1
0.01
P
I (A)
P
F(AV)
M
P
ARM
0.5
ARM p
I
M
(W)
(1µs)
1.0
(t )
δ
=0.5
t
0.1
Average forward power
dissipation versus average
forward current (per diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220AB, I
δ = 0.05
1.5
2.0
1E-2
δ = 0.1
2.5
1
I
F(AV)
t (µs)
3.0
p
δ = 0.2
t(s)
2
(A)
PAK and D
3.5
10
4.0
1E-1
δ = 0.5
4.5
5.0
2
100
δ
PAK)
=tp/T
5.5
T
δ = 1
T =125°C
T =25°C
T =75°C
C
6.0
C
C
tp
1000
1E+0
6.5
Figure 2.
Figure 4.
Figure 6.
6
5
4
3
2
1
0
80
70
60
50
40
30
20
10
0
1E-3
1.2
0.8
0.6
0.4
0.2
0
I
F(AV)
1
0
I (A)
M
25
P
ARM
δ
P
I
(A)
=tp/T
M
ARM p
(25°C)
25
(t )
T
δ
=0.5
t
Average forward current versus
ambient temperature
(
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
( TO-220FPAB)
50
δ
tp
= 0.5, per diode)
1E-2
50
75
T
R
th(j-a)
amb
T (°C)
75
j
t(s)
=R
(°C)
th(j-c)
100
TO-220FPAB
1E-1
100
Characteristics
R
th(j-a)
TO-220AB / D PAK / I
=15°C/W
125
125
2
T =125°C
T =25°C
T =75°C
C
C
C
2
PAK
150
1E+0
3/10
150