STPS20H100CR STMicroelectronics, STPS20H100CR Datasheet - Page 5

DIODE SCHOTTKY 100V 10A I2PAK

STPS20H100CR

Manufacturer Part Number
STPS20H100CR
Description
DIODE SCHOTTKY 100V 10A I2PAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS20H100CR

Voltage - Forward (vf) (max) @ If
770mV @ 10A
Current - Reverse Leakage @ Vr
4.5µA @ 100V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STPS20H100CR
Manufacturer:
ST
Quantity:
22 221
Part Number:
STPS20H100CR
Manufacturer:
ST
0
STPS20H100C
Figure 7.
Figure 9.
Figure 11. Forward voltage drop versus
1.0
0.8
0.6
0.4
0.2
0.0
1E+4
1E+3
1E+2
1E+0
100.0
1E+1
1E-2
1E-1
10.0
1E-3
1.0
0.1
0.0
Z
0
I (µA)
th(j-c)
δ = 0.5
Single pulse
I
δ = 0.2
δ = 0.1
R
FM
(A)
10
/R
th(j-c)
(typical values)
0.2
T =150°C
T =125°C
T =100°C
T =25°C
j
j
j
j
T =125°C
Relative variation of thermal
impedance junction to case versus
pulse duration (per diode,
TO-220AB, D
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
forward current (maximum values,
per diode)
j
20
(typical values)
T =150°C
j
1E-2
30
0.4
40
V
t (s)
V (V)
p
FM
R
0.6
2
50
PAK, I
(V)
60
T =25°C
j
1E-1
T =125°C
0.8
2
j
PAK)
70
δ
=tp/T
80
1.0
T
90
tp
1E+0
100
1.2
Figure 8.
Figure 10. Junction capacitance versus
Figure 12. Thermal resistance junction to
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
1000
500
200
100
0
1E-2
0
R
Z
th(j-a)
1
th(j-c)
δ = 0.5
Single pulse
δ = 0.2
δ = 0.1
C(pF)
(°C/W)
5
/R
th(j-c)
2
Relative variation of thermal
impedance junction to case versus
pulse duration
(per diode, TO-220FPAB)
reverse voltage applied (typical
values, per diode)
ambient versus copper surface
under tab (epoxy printed circuit
board FR4, Cu = 35 µm, D
10
1E-1
15
5
S(Cu)(cm²)
t (s)
p
V (V)
20
R
10
25
1E+0
20
Characteristics
30
δ
=tp/T
2
PAK)
V
OSC
50
F=1MHz
T
T =25°C
35
=30mV
j
tp
RMS
1E+1
5/11
100
40

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