STTH3002CW STMicroelectronics, STTH3002CW Datasheet - Page 4

DIODE FAST 200V 2X15A TO-247

STTH3002CW

Manufacturer Part Number
STTH3002CW
Description
DIODE FAST 200V 2X15A TO-247
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH3002CW

Voltage - Forward (vf) (max) @ If
1.05V @ 15A
Current - Reverse Leakage @ Vr
20µA @ 200V
Current - Average Rectified (io) (per Diode)
15A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
22ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-247-3
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.18 V at 30 A
Recovery Time
22 ns
Forward Continuous Current
15 A
Max Surge Current
180 A
Reverse Current Ir
20 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3552-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STTH3002CW
Manufacturer:
NSC
Quantity:
201
Part Number:
STTH3002CW
Manufacturer:
STMicroelectronics
Quantity:
326
Part Number:
STTH3002CW
Manufacturer:
ST
0
Characteristics
4/11
Figure 3.
Figure 5.
Figure 7.
100
1000
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
100
0
10
0
10
0.0
t (ns)
I
rr
0
FM
C(pF)
I =15A
V =160V
F
R
(A)
0.2
0.4
Forward voltage drop versus
forward current (maximum values,
per diode)
Junction capacitance versus
reverse applied voltage (typical
values, per diode)
Reverse recovery time versus
dI
F
50
/dt (typical values, per diode)
0.6
0.8
dI /dt(A/µs)
T =125°C
j
F
T =150°C
j
V (V)
100
1.0
R
100
V
FM
1.2
(V)
1.4
T =25°C
T =25°C
j
j
150
1.6
V
OSC
F=1MHz
T =25°C
=30mV
j
1.8
RMS
1000
200
2.0
Figure 4.
Figure 6.
Figure 8.
14
13
12
11
10
250
225
200
175
150
125
100
1.0
0.1
9
8
7
6
5
4
3
2
1
0
75
50
25
1.E-03
0
10
I
10
RM
Z
Q (nC)
th(j-c)
I =15A
V =160V
I =15A
V =160V
rr
F
F
R
R
(A)
Single pulse
/R
th(j-c)
Relative variation of thermal
impedance junction to case versus
pulse duration
Reverse recovery charges versus
dI
Peak reverse recovery current
versus dI
diode)
F
/dt (typical values, per diode)
1.E-02
dI /dt(A/µs)
F
dI /dt(A/µs)
F
/dt (typical values, per
T =125°C
F
j
t (s)
p
100
100
T =125°C
j
1.E-01
T =25°C
j
STTH3002C
T =25°C
j
1.E+00
1000
1000

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