STPS20L25CG-TR STMicroelectronics, STPS20L25CG-TR Datasheet

DIODE SCHOTTKY 25V 10A D2PAK

STPS20L25CG-TR

Manufacturer Part Number
STPS20L25CG-TR
Description
DIODE SCHOTTKY 25V 10A D2PAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS20L25CG-TR

Voltage - Forward (vf) (max) @ If
460mV @ 10A
Current - Reverse Leakage @ Vr
800µA @ 25V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
25V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
FEATURES AND BENEFITS
n
n
n
DESCRIPTION
Dual center tap Schottky rectifier suited to
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB and D
especially intended for use as a rectifier at the
secondary of 3.3V SMPS units.
ABSOLUTE RATINGS (limiting values, per diode)
* :
MAIN PRODUCT CHARACTERISTICS
July 2003 - Ed : 4A
Symbol
I
VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCY IN THE APPLICATIONS
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
P
dV/dt
I
I
I
I
F(AV)
T
dPtot
RRM
RSM
FSM
RRM
ARM
Tj
dTj
stg
V
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Rth j
(
1
a
)
thermal runaway condition for a diode on its own heatsink
LOW DROP POWER SCHOTTKY RECTIFIER
2
PAK, this device is
2 x 10 A
150 °C
0.35 V
25 V
Parameter
Tc = 145°C
tp = 10 ms Sinusoidal
tp=2 µs square F=1kHz
tp = 100 µs square
tp = 1µs Tj = 25°C
= 0.5
STPS20L25CT
TO-220AB
Per diode
Per device
STPS20L25CT/CG
A1
A2
A1
K
A2
- 65 to + 150
10000
STPS20L25CG
Value
5300
K
220
150
25
30
10
20
1
3
D
K
2
PAK
A1
A2
V/µs
Unit
°C
W
V
A
A
A
A
A
C
1/5

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STPS20L25CG-TR Summary of contents

Page 1

... V 150 °C 0.35 V STPS20L25CT 2 PAK, this device is Parameter Tc = 145° Sinusoidal tp=2 µs square F=1kHz tp = 100 µs square tp = 1µ 25°C STPS20L25CT/ TO-220AB D PAK STPS20L25CG Value 25 30 Per diode 10 Per device 20 220 1 3 5300 - 150 150 10000 A2 Unit °C V/µs ...

Page 2

STPS20L25CT/CG THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Tests conditions I * ...

Page 3

Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 200 180 160 140 120 100 t(s) =0.5 0 1E-3 1E-2 Fig. 7: Reverse leakage current versus reverse voltage ...

Page 4

STPS20L25CT/CG PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm FOOTPRINT DIMENSIONS (in millimeters) 16.90 10.30 8.90 4/5 REF ...

Page 5

... Marking STPS20L25CT STPS20L25CT STPS20L25CG STPS20L25CG STPS20L25CG-TR STPS20L25CG EPOXY MEETS UL94,V0 n Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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