S3M Fairchild Semiconductor, S3M Datasheet
S3M
Manufacturer Part Number
S3M
Description
DIODE GPP GEN PURP 3A 1000V SMC
Manufacturer
Fairchild Semiconductor
Datasheet
1.S3B.pdf
(3 pages)
Specifications of S3M
Voltage - Forward (vf) (max) @ If
1.2V @ 3A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
5µA @ 1000V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2.5µs
Capacitance @ Vr, F
60pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
DO-214AB, SMC
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
1000 V
Forward Voltage Drop
1.2 V
Recovery Time
2500 ns
Forward Continuous Current
3 A @ Ta=100C
Max Surge Current
100 A
Reverse Current Ir
5 uA
Power Dissipation
2.6 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
S3M
S3MFSTR
S3MFSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
S3M-13-F
Manufacturer:
DIODES
Quantity:
9 000
Company:
Part Number:
S3M-13-F
Manufacturer:
SAMSUNG
Quantity:
902
Part Number:
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Manufacturer:
DIODES/美台
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Part Number:
S3M-13-G
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
S3M-AU
Manufacturer:
PANJIT/强茂
Quantity:
20 000
Company:
Part Number:
S3M-E3/57T
Manufacturer:
Vishay Semiconductors
Quantity:
2 895
Part Number:
S3M-E3/57T
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
S3MB
Manufacturer:
LITEON/光宝
Quantity:
20 000
2001 Fairchild Semiconductor Corporation
Symbol
Symbol
Symbol
General Purpose Rectifiers
Absolute Maximum Ratings*
*
Thermal Characteristics
*
Electrical Characteristics
V
I
I
T
T
V
t
I
C
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
P
R
Device mounted on FR-4 PCB 0.013 mm.
F(AV)
FSM
rr
R
stg
J
RRM
F
T
D
JA
Features
•
•
Low profile package.
Glass passivated junction.
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current, @ T
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Forward Voltage @ 3.0 A
Reverse Recovery Time
Reverse Current @ rated V
Total Capacitance
Power Dissipation
Thermal Resistance, Junction to Ambient*
I
V
F
R
= 0.5 A, I
8.3 ms Single Half-Sine-Wave
= 4.0 V, f = 1.0 MHz
R
= 1.0 A, I
Parameter
Parameter
Parameter
rr
R
= 0.25 A
T
S3A - S3M
A
= 25°C unless otherwise noted
T
T
T
A
A
A
= 25°C unless otherwise noted
A
= 25 C
= 125 C
= 100°C
3A
3A
50
COLOR BAND DENOTES CATHODE
SMC/DO-214AB
100
3B
3B
200
3D
3D
-55 to +150
-55 to +150
Device
Value
Value
400
3G
100
3G
250
3.0
1.2
2.5
5.0
2.6
60
47
600
3J
3J
800
3K
3K
1000
3M
3M
S3A-S3M, Rev. C
Units
Units
Units
C/W
W
pF
V
A
A
V
C
C
A
A
s
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S3M Summary of contents
Page 1
... COLOR BAND DENOTES CATHODE T = 25°C unless otherwise noted 100 = 100° 25°C unless otherwise noted 0. 125 C A Value Units 200 400 600 800 1000 V 3.0 A 100 A -55 to +150 C -55 to +150 C Value Units 2 C/W Device Units 1.2 V 2.5 s 5.0 A 250 S3A-S3M, Rev. C ...
Page 2
... Figure 4. Reverse Current vs Reverse Voltage 50 º Reverse Voltage, V [V] R Figure 5. Total Capacitance General Purpose Rectifiers (continued) º Pulse Width = 300 s 2% Duty Cycle 0.7 0.8 0.9 1 1.1 1.2 1.3 Forward Voltage, V [V] F º 125 C A º 100 120 140 R everse Voltage 100 S3A-S3M, Rev. C ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...