BAS86,115 NXP Semiconductors, BAS86,115 Datasheet - Page 5

DIODE SCHOTTKY 50V 200MA SOD80C

BAS86,115

Manufacturer Part Number
BAS86,115
Description
DIODE SCHOTTKY 50V 200MA SOD80C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS86,115

Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Voltage - Forward (vf) (max) @ If
900mV @ 100mA
Voltage - Dc Reverse (vr) (max)
50V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
5µA @ 40V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
8pF @ 1V, 1MHz
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
50 V
Forward Continuous Current
0.2 A
Max Surge Current
5 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
0.9 V @ 0.1 A
Maximum Reverse Leakage Current
5 uA
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3411-2
933939380115
BAS86 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS86,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
8. Test information
9. Package outline
10. Packing information
BAS86
Product data sheet
Fig 5.
V = V
(1) I
R
S
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
Reverse recovery voltage test circuit and waveforms
R
R
= 50
+ I
= 1 mA
F
Ω
×
R
S
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description
BAS86
Fig 6.
For further information and the availability of packing methods, see
I
F
r
D.U.T.
= 0.35 ns
Package outline SOD80C
Packing methods
SOD80C 4 mm pitch, 8 mm tape and reel
All information provided in this document is subject to legal disclaimers.
OSCILLOSCOPE
r
mga881
= 0.6 ns; reverse voltage pulse duration t
SAMPLING
R
i
= 50
Rev. 4 — 8 September 2010
Dimensions in mm
Ω
0.3
V
R
3.7
3.3
t
10 %
r
90 %
input signal
t
p
p
= 100 ns; duty cycle δ = 0.05
0.3
Section
t
1.60
1.45
[1]
+ I
06-03-16
14.
F
Schottky barrier diode
output signal
Packing quantity
2500
-115
© NXP B.V. 2010. All rights reserved.
BAS86
t rr
10000
-135
(1)
t
5 of 10

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