RB161L-40TE25 Rohm Semiconductor, RB161L-40TE25 Datasheet - Page 2

• Manufacturer Part Number: RB161L-40TE25
• Description: DIODE SCHOTTKY 20V 1A SOD106
• Manufacturer: Rohm Semiconductor

Specifications of RB161L-40TE25

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 400mV @ 1A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1mA @ 20V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-106, PMDS
• Repetitive Reverse Voltage Vrrm Max: 40V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 400mV
• Forward Surge Current Ifsm Max: 70A
• Operating Temperature Range: -40°C To +125°C
• Diode Case: RoHS Compliant
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 1 A
• Max Surge Current: 70 A
• Configuration: Single
• Forward Voltage Drop: 0.4 V
• Maximum Reverse Leakage Current: 1 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: RB161L-40TE25TR

Diodes
Electrical characteristic curves (Ta=25°C)
0.001
0.01
150
100
370
360
350
340
330
320
200
150
100
0.1
50
50
0
1
0
Ta=150℃
0
1
Ta=125℃
FORWARD VOLTAGE：VF(mV)
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
IFSM DISPERSION MAP
VF DISPERSION MAP
Ta=75℃
200
AVE:347.7mV
TIME:t(ms)
AVE:127.0A
10
Ifsm
Ifsm
Ta=25℃
Ta=-25℃
400
t
Ta=25℃
n=30pcs
8.3ms
IF=1A
1cyc
100
600
1000000
100000
1000
10000
500
450
400
350
300
250
200
150
100
100
1000
50
0.1
20
15
10
10
100
0
5
0
1
10
0.01
1
5
Mounted on epoxy board
0.1
REVERSE VOLTAGE：VR(V)
Rth-t CHARACTERISTICS
VR-IR CHARACTERISTICS
10
trr DISPERSION MAP
IR DISPERSION MAP
AVE:110.3uA
1
AVE:9.3ns
TIME:t(s)
15
IM=100mA
1ms
10
20
300us
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
time
Ta=-
Irr=0.25*IR
Ta=25℃
n=30pcs
Ta=25℃
n=10pcs
VR=20V
100
IF=0.5A
℃
IR=1A
Rth(j-c)
25
Rth(j-a)
IF=0.5A
1000
30
1000
300
290
280
270
260
250
240
230
220
210
200
200
150
100
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
100
50
1
0
10
0
1
0
1
0
Sin(θ＝180)
IFSM-CYCLE CHARACTERISTICS
5
VR-Ct CHARACTERISTICS
FORWARD CURRENT：Io(A)
REVERSE VOLTAGE:VR(V)
Io-Pf CHARACTERISTICS
0.5
AVERAGE RECTIFIED
Ct DISPERSION MAP
NUMBER OF CYCLES
D=1/2
10
AVE:251.8pF
Rev.H
Ifsm
RB161L-40
10
1
15
8.3ms
DC
20
1cyc
1.5
Ta=25℃
n=10pcs
f=1MHz
VR=0V
f=1MHz
8.3ms
25
2/3
100
2
30