PRLL5817,115 NXP Semiconductors, PRLL5817,115 Datasheet - Page 8

DIODE SCHOTTKY 20V 1A SOD87

PRLL5817,115

Manufacturer Part Number
PRLL5817,115
Description
DIODE SCHOTTKY 20V 1A SOD87
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PRLL5817,115

Package / Case
LLDL (SOD87)
Voltage - Forward (vf) (max) @ If
450mV @ 1A
Voltage - Dc Reverse (vr) (max)
20V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
1mA @ 20V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
70pF @ 4V, 1MHz
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
20 V
Forward Continuous Current
1 A @ Ta=60C
Max Surge Current
25 A
Configuration
Single
Forward Voltage Drop
0.75 V @ 3 A
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Rectifier Type
Schottky Diode
Peak Rep Rev Volt
20V
Avg. Forward Curr (max)
1A
Rev Curr
1000uA
Peak Non-repetitive Surge Current (max)
25A
Forward Voltage
0.75V
Operating Temp Range
-65C to 125C
Package Type
MELF
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
Other names
568-1179-2
933968000115
PRLL5817 T/R
NXP Semiconductors
1999 Apr 22
Schottky barrier diodes
Fig.10 PRLL5819. Maximum permissible junction
( o C)
T j
200
100
0
temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.
0
10
V R
V R (V)
V RWM
δ = 0.2
δ = 0.5
MBE637
20
8
Fig.11 PRLL5819. Reverse power dissipation as a
(W)
P R
0.05
0.1
0
function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.
0
V R
PRLL5817; PRLL5818;
V RWM
δ = 0.5
20
δ = 0.2
V R (V)
Product data sheet
PRLL5819
MBE639
40

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