RB050L-40TE25 Rohm Semiconductor, RB050L-40TE25 Datasheet - Page 2

• Manufacturer Part Number: RB050L-40TE25
• Description: DIODE SCHOTTKY 40V 3A SOD-106
• Manufacturer: Rohm Semiconductor

Specifications of RB050L-40TE25

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 550mV @ 3A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 1mA @ 40V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-106, PMDS
• Repetitive Reverse Voltage Vrrm Max: 40V
• Forward Current If(av): 3A
• Forward Voltage Vf Max: 550mV
• Forward Surge Current Ifsm Max: 70A
• Operating Temperature Range: -40°C To +125°C
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 3 A
• Max Surge Current: 70 A
• Configuration: Single
• Forward Voltage Drop: 0.55 V
• Maximum Reverse Leakage Current: 1000 uA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: RB050L-40TE25TR

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Electrical characteristic curves (Ta=25°C)
RB050L-40
0.01
0.1
10
300
250
200
150
100
530
520
510
500
490
480
200
150
100
1
50
50
0
0
0
0.1
Ta=125℃
100
FORWARD VOLTAGE：VF(mV)
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
VF DISPERSION MAP
IFSM DISRESION MAP
Ta=75℃
200
1
TIME:t(ms)
AVE:503.8mV
AVE:157.0A
300
Ifsm
Ifsm
400
8.3ms
10
t
Ta=-25℃
500
1cyc
Ta=25℃
n=30pcs
Ta=25℃
IF=3A
600
100
1000000
100000
10000
1000
0.01
1000
100
100
20
15
10
0.1
10
100
90
80
70
60
50
40
30
20
10
5
0
0.1
10
1
0
1
0.001
0
Mounted on epoxy board
5
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Rth-t CHARACTERISTICS
10
trr DISPERSION MAP
IR DISPERSION MAP
0.1
AVE:9.069uA
15
AVE:9.3ns
TIME:t(s)
2/3
20
IM=100mA
1ms
25
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
300us
10
Irr=0.25*IR
time
30
Ta=25℃
n=10pcs
IF=0.5A
IR=1A
Ta=25℃
n=30pcs
VR=40V
Rth(j-a)
Rth(j-c)
IF=1A
35
1000
40
1000
200
150
100
600
590
580
570
560
550
540
530
520
510
500
100
50
10
5
4
3
2
1
0
0
1
0
1
0
Sin(θ＝180)
IFSM-CYCLE CHARACTERISTICS
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1
FORWARD CURRENT：Io(A)
Ct DISPERSION MAP
NUMBER OF CYCLES
Io-Pf CHARACTERISTICS
AVERAGE RECTIFIED
10
D=1/2
AVE:579.1pF
2
Ifsm
10
15
3
20
8.3ms
2011.04 - Rev.D
f=1MHz
1cyc
Ta=25℃
n=10pcs
f=1MHz
VR=0V
4
25
Data Sheet
8.3ms
DC
100
30
5