STPS3L60S STMicroelectronics, STPS3L60S Datasheet
STPS3L60S
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STPS3L60S Summary of contents
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... Critical rate of rise of reverse voltage dPtot thermal runaway condition for a diode on its own heatsink dTj Rth July 2003 - Ed: 2A POWER SCHOTTKY RECTIFIER 150°C 0.65 V Parameter Tc = 100 Sinusoidal µs square F=1kHz tp = 1µ 25°C STPS3L60S SMC (JEDEC DO-214AB) Value Unit 0 1600 175 150 10000 V/µ ...
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... STPS3L60S THERMAL RESISTANCES Symbol R Junction to leads th(j-l) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter I * Reverse leakage current Forward voltage drop Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : 0. 0.037 I F(AV) F (RMS) Fig. 1: Average forward power dissipation versus average forward current. ...
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... Tc=100°C 0.1 0.0 1E-3 1E-1 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(pF) 500 200 100 50 20 VR( (25°C) T (° 100 Single pulse tp(s) 1E-2 1E-1 VR(V) 10 STPS3L60S 125 150 T tp =tp/T 1E+0 F=1MHz Tj=25°C 100 3/5 ...
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... STPS3L60S Fig. 9-1: Forward voltage drop versus forward current (low level, maximum values). IFM(A) 5.0 Tj=150°C 4.5 (typical values) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 VFM(V) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig ...
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... Spain - Sweden - Switzerland - United Kingdom - United States. REF 3.3 2.0 Package Weight SMC 0.24g STMicroelectronics GROUP OF COMPANIES http://www.st.com STPS3L60S DIMENSIONS Millimeters Inches Min. Max. Min. Max. 1.90 2.45 0.075 0.096 0.05 0.20 0.002 0.008 2.90 3.2 0.114 0.126 0.15 0.41 ...