STPS3L25S STMicroelectronics, STPS3L25S Datasheet
STPS3L25S
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STPS3L25S Summary of contents
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... Rth July 2003 - Ed 150°C 0.44 V Parameter T = 115° Sinusoidal tp= 2 µs square F=1kHz tp = 100 µs square tp = 1µ 25°C STPS3L25S SMC JEDEC DO-214AB Value 0 150 1500 150 10000 Unit °C ...
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... STPS3L25S THERMAL RESISTANCES Symbol R Junction to lead th(j-l) STATIC ELECTRICAL CHARACTERISTICS Symbol Tests Conditions I * Reverse leakage current Forward voltage drop F Pulse test 380 µs, < evaluate the maximum conduction losses use the following equation : 0 0.047 I F(AV) F (RMS) Fig. 1: Average forward power dissipation versus average forward current ...
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... Ta=100°C 0.2 0.0 1E-1 1E+0 1E-2 Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(pF) 500 100 (25°C) T (° 100 = 0.5 = 0.2 = 0.1 tp(s) Single pulse 1E-1 1E+0 1E+1 VR( STPS3L25S 125 150 T =tp/T tp 1E+2 5E+2 F=1MHz Tj=25° 3/5 ...
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... STPS3L25S Fig. 9-1: Forward voltage drop versus forward current (maximum values, high level). IFM(A) 50 Typical values Tj=150°C 10 Tj=125°C Tj=100°C VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 Fig. 10: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: Rth(j-a) (° ...
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... Spain - Sweden - Switzerland - United Kingdom - United States. REF 3.3 2.0 Package Weight SMC 0.243g STMicroelectronics GROUP OF COMPANIES http://www.st.com STPS3L25S DIMENSIONS Millimeters Inches Min. Max. Min. 1.90 2.45 0.075 0.05 0.20 0.002 2.90 3.2 0.114 0.15 0.41 0.006 7.75 8.15 0.305 6 ...