SDT12S60 Infineon Technologies, SDT12S60 Datasheet - Page 4

• Manufacturer Part Number: SDT12S60
• Description: SCHOTTKY 600V 12A TO220-2-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of SDT12S60

• Package / Case: TO-220-2
• Voltage - Forward (vf) (max) @ If: 1.7V @ 12A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 12A (DC)
• Current - Reverse Leakage @ Vr: 400µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 450pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 12 A
• Max Surge Current: 36 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 400 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: Through Hole
• Technology: thinQ!™
• V: 600.0 V
• If (typ): 12.0 A
• Qc (typ): 30.0 nC
• Package: TO-220 (decapped middle leg)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SDT12S60IN; SDT12S60X; SDT12S60XK; SDT12S60XTIN; SDT12S60XTIN; SP000013825

1 Power dissipation
P
3 Typ. forward characteristic
I
parameter: T j , t
Rev. 2.3
F
tot
= f ( V
= f ( T
W
A
90
70
60
50
40
30
20
10
24
16
12
0
8
4
0
0
0
F
)
150°C
125°C
100°C
25°C
-40°C
C
20
)
0.5
40
p
= 350 µs
60
1
80
100 120 140
1.5
V
°C
T
V
C
F
180
2.5
Page 4
2 Diode forward current
I
parameter: T
4 Typ. forward power dissipation vs.
average forward current
P
F
F(AV) = f ( I
= f ( T
W
A
24
20
18
16
14
12
10
44
36
32
28
24
20
16
12
8
6
4
2
0
8
4
0
0
0
C
d=0.1
d=0.2
d=0.5
d=1
)
F
20
)
2
j
T
≤ 175 °C
40
C
4
=100°C, d = t
60
6
80
8
100 120 140
10
p
/ T
SDT12S60
SDT12S60
2008-06-03
12
A
°C
T
I
F(AV)
C
180
16