1N916B Fairchild Semiconductor, 1N916B Datasheet

DIODE HI CONDUCTANCE 100V DO-35

1N916B

Manufacturer Part Number
1N916B
Description
DIODE HI CONDUCTANCE 100V DO-35
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 1N916B

Voltage - Forward (vf) (max) @ If
1V @ 20mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
5µA @ 75V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
100 V
Forward Voltage Drop
1 V @ 0.02 A
Recovery Time
4 ns
Forward Continuous Current
0.3 A
Max Surge Current
4 A
Reverse Current Ir
5 uA @ 75 V
Power Dissipation
0.5 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2007 Fairchild Semiconductor Corporation
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
V
I
I
i
I
T
T
P
R
f
O
F
FSM
STG
J
RRM
D
θJA
Symbol
Symbol
Cathode is denoted with a black band
Power Dissipation
Thermal Resistance, Junction to Ambient
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
DC Forward Current
Recurrent Peak Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Tempera
DO-35
Parameter
Parameter
T
a
=25°C unless otherwise noted
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
LL-34
1
1N/FDLL 914/A/B / 4148 / 4448
-65 to + 175
-65 to + 175
Value
Max.
100
200
300
400
-1st band denotes cathode terminal
1.0
4.0
500
300
DEVICE
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
FDLL916B
FDLL4148
FDLL4448
LL-34 COLOR BAND MARKING
and has wider width
1ST BAND
BLACK
BLACK
BROWN
BLACK
BROWN
BLACK
BROWN
BLACK
2ND BAND
BROWN
GRAY
WHITE
RED
BROWN
BLACK
BROWN
BLACK
January 2007
www.fairchildsemi.com
Units
Units
°C/W
mA
mA
mA
mW
°C
°C
V
A
A

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1N916B Summary of contents

Page 1

... These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol P Power Dissipation D R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2 LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL T =25°C unless otherwise noted a ...

Page 2

... Figure 3. Forward Voltage vs Forward Current 100µA 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev =25°C unless otherwise noted A Test Conditions I = 100µ 5.0µA R 1N914B/4448 I = 5.0mA F 1N916B I = 5.0mA F 1N914/916/4148 I = 10mA F 1N914A/916A I = 20mA F 1N916B I = 20mA F 1N914B/4448 I = 100mA 20V 20V 150° 75V 1.0MHz 1.0MHz 10mA 6.0V (600mA) F ...

Page 3

Typical Characteristics 1 1.4 1.2 1.0 0.8 0 100 Forward Current, I Figure 5. Forward Voltage vs Forward Current 800mA 0.90 0.85 0.80 0. ...

Page 4

... FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ ...

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