1N4454 Fairchild Semiconductor, 1N4454 Datasheet
1N4454
Manufacturer Part Number
1N4454
Description
DIODE HI CONDUCTANCE 50V DO-35
Manufacturer
Fairchild Semiconductor
Datasheet
1.1N4454TR.pdf
(2 pages)
Specifications of 1N4454
Voltage - Forward (vf) (max) @ If
1V @ 10mA
Voltage - Dc Reverse (vr) (max)
50V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
100nA @ 50V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
4pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
75 V
Forward Voltage Drop
1 V @ 0.01 A
Recovery Time
4 ns
Forward Continuous Current
0.4 A
Max Surge Current
4 A
Reverse Current Ir
0.1 uA @ 50 V
Power Dissipation
0.5 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
1N4454
Manufacturer:
FSC
Quantity:
57 800
Company:
Part Number:
1N4454-1JANTX
Manufacturer:
Microsemi
Quantity:
1 400
Company:
Part Number:
1N4454TR
Manufacturer:
FSC
Quantity:
130 000
1997 Fairchild Semiconductor Corporation
P
R
W
I
I
i
i
T
T
Symbol
Symbol
f
f(surge)
O
F
D
stg
J
Absolute Maximum Ratings*
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
*
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
JA
IV
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
1N4454
Derate above 25 C
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
DO-35
Characteristic
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
Discrete POWER & Signal
1N4454
Max
3.33
500
300
-65 to +200
Value
400
200
600
175
1.0
4.0
50
Technologies
Units
mW/ C
Units
mA
mA
mA
mW
C/W
V
A
A
C
C
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1N4454 Summary of contents
Page 1
... Thermal Resistance, Junction to Ambient R JA 1997 Fairchild Semiconductor Corporation TA = 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Discrete POWER & Signal Technologies Value Units 50 V 200 mA 400 mA 600 mA 1.0 A 4.0 A -65 to +200 C 175 C Max Units 1N4454 500 mW 3.33 mW/ C 300 C/W ...
Page 2
Electrical Characteristics Symbol Parameter B Breakdown Voltage V I Reverse Current R V Forward Voltage F C Diode Capacitance O T Reverse Recovery Time RR High Conductance Ultra Fast Diode TA = 25°C unless otherwise noted Test Conditions I = ...