1N3070TR Fairchild Semiconductor, 1N3070TR Datasheet
1N3070TR
Manufacturer Part Number
1N3070TR
Description
DIODE SGL JUNCT 200V SW DO-35
Manufacturer
Fairchild Semiconductor
Datasheet
1.1N3070_T50R.pdf
(2 pages)
Specifications of 1N3070TR
Voltage - Forward (vf) (max) @ If
1V @ 100mA
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
500mA
Current - Reverse Leakage @ Vr
100nA @ 175V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
1 V @ 0.1 A
Recovery Time
50 ns
Forward Continuous Current
0.5 A
Max Surge Current
4 A
Reverse Current Ir
0.1 uA
Power Dissipation
0.5 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
1N3070TR
Manufacturer:
FSC
Quantity:
150 000
©2004 Fairchild Semiconductor Corporation
Small Signal Diode
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
STG
J
RRM
D
R
F
T
Symbol
Symbol
JA
Symbol
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Leakage
Total Capacitance
Reverse Recovery Time
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
T
Parameter
Parameter
A
=25 C unless otherwise noted
T
A
= 25 C unless otherwise noted
1N3070
COLOR BAND DENOTES CATHODE
I
I
V
V
V
I
R
F
F
R
R
R
= 100mA
= I
= 100 A
= 175V
= 175V, T
= 0V, f = 1.0MHz
DO-35
R
Test Conditions
= 30mA, RL = 100
A
= 150 C
-65 to +200
Value
Value
200
500
175
500
300
1.0
4.0
Min.
200
Max.
100
100
1.0
50
5
Units
Units
mW
mA
V
A
A
C
C
C
Units
1N3070, Rev. A
nA
pF
ns
V
V
A
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1N3070TR Summary of contents
Page 1
... Electrical Characteristics Symbol Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Leakage R C Total Capacitance T t Reverse Recovery Time rr ©2004 Fairchild Semiconductor Corporation 1N3070 DO-35 COLOR BAND DENOTES CATHODE unless otherwise noted A Parameter Parameter T =25 C unless otherwise noted A Test Conditions I = 100 100mA ...
Page 2
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...