BAV21 Fairchild Semiconductor, BAV21 Datasheet
BAV21
Manufacturer Part Number
BAV21
Description
DIODE GEN PURP 250V 200MA DO-35
Manufacturer
Fairchild Semiconductor
Datasheet
1.BAV21_NT50A.pdf
(4 pages)
Specifications of BAV21
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
250V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
100nA @ 200V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
250 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
0.2 A
Max Surge Current
4 A
Reverse Current Ir
0.1 uA @ 200 V
Power Dissipation
0.5 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Price
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2001 Fairchild Semiconductor Corporation
Small Signal Diode
Absolute Maximum Ratings*
*
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Symbol
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
stg
J
RRM
D
R
F
T
JA
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Maximum Repetitive Reverse Voltage
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
BAV19 / 20 / 21
Parameter
Parameter
T
A
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
= 25°C unless otherwise noted
Color Band Denotes Cathode
T
A
= 25°C unless otherwise noted
I
I
I
I
I
V
V
V
V
V
V
V
I
R
R
R
R
F
F
F
DO-35
R
R
R
R
R
R
R
L
= 100 mA
= 200 mA
= I
= 100 A
= 100 A
= 100 A
= 100
= 100 V
= 100 V, T
= 150 V
= 150 V, T
= 200 V
= 200 V, T
= 0, f = 1.0 MHz
R
Test Conditions
= 30 mA, I
A
A
A
= 150 C
= 150 C
= 150 C
RR
= 3.0 mA,
BAV19
BAV20
BAV21
-65 to +200
Value
Value
Min
120
200
250
120
200
250
200
175
500
300
1.0
4.0
Max
1.25
100
100
100
100
100
100
1.0
5.0
50
Units
Units
BAV19/20/21, Rev. C
mW
mA
C/W
Units
V
V
V
A
A
C
C
nA
nA
nA
pF
ns
V
V
V
V
V
A
A
A
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BAV21 Summary of contents
Page 1
... I = 100 A R BAV20 I = 100 A R BAV21 I = 100 100 200 100 V R BAV19 V = 100 150 150 V R BAV20 V = 150 150 200 V R BAV21 V = 200 150 1.0 MHz mA 3.0 mA 100 L Value Units 120 V 200 V 250 V 200 mA 1.0 A 4.0 A -65 to +200 C 175 C Value Units ...
Page 2
Typical Characteristics 325 Ta=25 C ° 300 275 everse C urrent, I [uA] R Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100uA 100 Ta ° ...
Page 3
Typical Characteristics 900 800 ° ° Ta= -40 C 700 600 ° Ta 500 400 Ta= +80 C ° 300 200 100 0.001 0.003 0.01 0.03 0.1 0.3 F orw ard C urrent ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...