BAS16 Fairchild Semiconductor, BAS16 Datasheet
BAS16
Manufacturer Part Number
BAS16
Description
DIODE ULTRAFAST HI COND SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BAS16_D87Z.pdf
(4 pages)
Specifications of BAS16
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
85V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
1µA @ 75V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
6ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
85 V
Forward Voltage Drop
1.25 V @ 0.15 A
Recovery Time
6 ns
Forward Continuous Current
0.2 A
Max Surge Current
2 A
Reverse Current Ir
1 uA
Power Dissipation
0.35 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS16FSTR
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2001 Fairchild Semiconductor Corporation
*
Small Signal Diode
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Absolute Maximum Ratings*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Symbol
Symbol
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
stg
J
RRM
D
R
F
T
JA
3
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
SOT-23
1
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
2
Parameter
Parameter
T
A
= 25°C unless otherwise noted
BAS16
T
A
= 25°C unless otherwise noted
1
I
I
I
I
I
V
V
V
V
I
R
R
F
F
F
F
F
A6
R
R
R
R
L
= 1.0 mA
= 10 mA
= 50 mA
= 150 mA
= I
= 5.0 A
= 75 V
= 25 V, T
= 75 V, T
= 0, f = 1.0 MHz
= 100
3
Test Conditions
R
= 10 mA, I
2
A
A
= 150 C
= 150 C
RR
= 1.0 mA,
Connection Diagram
-55 to +150
-55 to +150
Min
Value
Value
85
200
350
357
1.0
2.0
85
1
3
Max
1.25
715
855
2NC
1.0
1.0
2.0
6.0
30
50
Units
Units
Units
mW
mA
C/W
V
A
A
C
C
mV
mV
pF
ns
V
V
V
BAS16, Rev. C
A
A
A
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BAS16 Summary of contents
Page 1
... Test Conditions 150 150 150 1.0 MHz mA 1.0 mA 100 L Connection Diagram 3 1 2NC Value Units 85 V 200 mA 1.0 A 2.0 A -55 to +150 C -55 to +150 C Value Units 350 mW 357 C/W Min Max Units V 85 715 mV 855 mV 1.0 V 1. 2.0 pF 6.0 ns BAS16, Rev. C ...
Page 2
... Ta 700 650 600 550 500 450 30 50 100 0.1 0.2 0.3 Figure 4. Forward Voltage vs Forward Current 1.3 Ta 1.2 1.1 1 500 0 2 Figure 6. Total Capacitance Small Signal Diode (continued 100 Reverse Voltage 100 V 0 Forward Current, I [mA 0 Reverse Voltage [V] BAS16, Rev. C ...
Page 3
... SOT-23 Pkg 200 100 0 0 Figrue 9. Power Derating Curve 500 400 300 200 100 Ambient Temperature Figure 8. Average Rectified Current (I versus Ambient Temperature (T DO-35 Pkg 50 100 150 200 o Average Temperature Small Signal Diode (continued 100 150 F(AV BAS16, Rev. C ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...