S3B-E3/57T Vishay, S3B-E3/57T Datasheet - Page 3
![DIODE GPP 3A 100V SMC](/photos/5/33/53334/112-do-214ab_sml.jpg)
S3B-E3/57T
Manufacturer Part Number
S3B-E3/57T
Description
DIODE GPP 3A 100V SMC
Manufacturer
Vishay
Datasheet
1.S3G-E351T.pdf
(4 pages)
Specifications of S3B-E3/57T
Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.15V @ 2.5A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
10µA @ 100V
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2.5µs
Mounting Type
Surface Mount
Package / Case
DO-214AB, SMC
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
100 V
Forward Voltage Drop
1.15 V @ 2.5 A
Recovery Time
2500 ns (Typ)
Forward Continuous Current
3 A
Max Surge Current
100 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Repetitive Reverse Voltage Vrrm Max
100V
Forward Current If(av)
3A
Forward Voltage Vf Max
1.15V
Reverse Recovery Time Trr Max
2.5µs
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
S3B-E3/57T
S3B-E3/57TGITR
S3B-E3/57TGITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
S3B-E3/57T
Manufacturer:
Vishay Semiconductors
Quantity:
179
Part Number:
S3B-E3/57T
Manufacturer:
VISHAY/威世
Quantity:
20 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88713
Revision: 08-Apr-08
Figure 3. Typical Instantaneous Forward Characteristics
0.01
100
100
0.1
0.1
10
10
1
1
0.6
0
T
Pulse Width = 300 µs
1 % Duty Cycle
Figure 4. Typical Reverse Characteristics
J
Percent of Rated Peak Reverse Voltage (%)
= 25 °C
0.7
Instantaneous Forward Voltage (V)
20
0.8
40
0.079 (2.06)
0.103 (2.62)
0.9
0.030 (0.76)
0.126 (3.20)
0.114 (2.90)
0.060 (1.52)
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
1.0
60
1.1
T
DO-214AB (SMC)
T
J
J
80
= 125 °C
= 25 °C
0.305 (7.75)
0.260 (6.60)
0.320 (8.13)
0.280 (7.11)
1.2
Cathode Band
100
1.3
0.008 (0.2)
0 (0)
0.246 (6.22)
0.220 (5.59)
0.012 (0.305)
0.006 (0.152)
0.126 (3.20)
MIN.
100
100
0.1
10
10
1
0.01
Figure 6. Typical Transient Thermal Impedance
1
Mounted on 0.20 x 0.27" (5 x 7 mm)
Copper Pad Areas
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
0.1
0.320 REF.
t - Pulse Duration (s)
Reverse Voltage (V)
0.060 (1.52)
MIN.
0.185 (4.69)
10
1
MAX.
S3A thru S3M
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
www.vishay.com
100
100
3