MBRA120TRPBF Vishay, MBRA120TRPBF Datasheet - Page 2

• Manufacturer Part Number: MBRA120TRPBF
• Description: DIODE SCHOTTKY SMA
• Manufacturer: Vishay
• Series: -r

Specifications of MBRA120TRPBF

• Operating Temperature Range: - 65 C to + 150 C
• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 450mV @ 1A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 200µA @ 20V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 1 A
• Max Surge Current: 310 A
• Configuration: Single
• Forward Voltage Drop: 0.52 V @ 2 A
• Maximum Reverse Leakage Current: 200 uA
• Mounting Style: SMD/SMT
• Repetitive Reverse Voltage Vrrm Max: 20V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 450mV
• Forward Surge Current Ifsm Max: 310A
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Document Number: 94300
MBRA120TRPbF
Bulletin PD-20776 07/04
Voltage Ratings
Electrical Specifications
Thermal-Mechanical Specifications
Absolute Maximum Ratings
V
V
(*) dPtot
T
T
R
R
Wt
V
I
C
L
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
I
I
E
I
RM
F(AV)
FSM
AR
R
RWM
S
J
stg
FM
thJL
thJA
AS
T
dTj
Part number
Max. DC Reverse Voltage (V)
Max. Working Peak Reverse Voltage (V)
Parameters
Parameters
Parameters
Max. Junction Temperature Range(*) - 65 to 150
Max. Storage Temperature Range
Max. Thermal Resistance Junction
to Lead
Max. Thermal Resistance Junction
to Ambient
Approximate Weight
Case Style
Device Marking
Max. Forward Voltage Drop (1)
Max. Reverse Leakage Current (1)
Typical Junction Capacitance
Typical Series Inductance
Max. Average Forward Current
Max. Peak One Cycle Non-Repetitive
Surge Current
Non Repetitive Avalanche Energy
Repetitive Avalanche Current
<
Rth( j-a)
1
thermal runaway condition for a diode on its own heatsink
(**)
0.07(0.002) gr (oz)
- 65 to 150
Value
Value Units Conditions
0.015
Typ.
0.42
0.46
0.33
0.39
0.30
0.36
110
310
2.0
7.0
2.0
1.0
2.0
1.0
40
35
80
-
IR12A
SMA
Units
°C/W DC operation
°C/W
10000
Max.
°C
°C
mJ
0.45
0.52
0.37
0.45
0.35
0.43
A
A
0.2
6.0
20
-
-
Similar D-64
50% duty cycle @ T
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
J
= 25 °C, I
Units
V/ µs (Rated V
mA
mA
mA
nH
pF
V
V
V
V
V
V
@ 1A
@ 2A
@ 1A
@ 2A
@ 1A
@ 2A
T
T
T
V
1Mhz), @ 25°C
Measured lead to lead 5mm from package body
AS
J
J
R
J
= 100 °C
= 125 °C
= 25 °C
= 5V
Conditions
= 1A, L = 4mH
Conditions
DC
(**) Mounted 1 inch square PCB
MBRA120TR
R
L
)
= 136°C, rectangular wave form
(test signal range 100kHz to
20
T
T
T
J
J
J
Following any rated
load condition and
with rated V
= 25 °C
= 100 °C
= 125 °C
www.vishay.com
V
R
= rated V
RRM
applied
R
2