BAT54,215 NXP Semiconductors, BAT54,215 Datasheet

DIODE SCHOTTKY 30V 200MA SOT23

BAT54,215

Manufacturer Part Number
BAT54,215
Description
DIODE SCHOTTKY 30V 200MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAT54,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
2µA @ 25V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
5ns
Capacitance @ Vr, F
10pF @ 1V, 1MHz
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Configuration
Single
Recovery Time
5 ns
Forward Voltage Drop
0.8 V @ 0.1 A
Maximum Reverse Leakage Current
2 uA @ 25 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1610-2
933742280215
BAT54 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAT54,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product data sheet
Supersedes data of 2001 Oct 12
book, halfpage
DATA SHEET
BAT54 series
Schottky barrier (double) diodes
DISCRETE SEMICONDUCTORS
M3D088
2002 Mar 04

Related parts for BAT54,215

BAT54,215 Summary of contents

Page 1

DATA SHEET book, halfpage BAT54 series Schottky barrier (double) diodes Product data sheet Supersedes data of 2001 Oct 12 DISCRETE SEMICONDUCTORS M3D088 2002 Mar 04 ...

Page 2

... NXP Semiconductors Schottky barrier (double) diodes FEATURES • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package ...

Page 3

... NXP Semiconductors Schottky barrier (double) diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per diode V continuous reverse voltage R I continuous forward current F I repetitive peak forward current FRM I non-repetitive peak forward current FSM T storage temperature ...

Page 4

... NXP Semiconductors Schottky barrier (double) diodes 3 10 handbook, halfpage I F (mA (1) (2) ( 0.4 = 125 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.3 Forward current as a function of forward voltage; typical values. 15 handbook, halfpage C d (pF ° MHz; T amb Fig.5 Diode capacitance as a function of reverse voltage ...

Page 5

... NXP Semiconductors Schottky barrier (double) diodes PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2002 Mar scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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