RB451FT106 Rohm Semiconductor, RB451FT106 Datasheet
RB451FT106
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RB451FT106 Summary of contents
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Diodes Shottky barrier diode RB451F Application Low current rectification Features 1) Small mold type. (UMD3) 2) Low High reliability. Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25°C) Parameter R everse voltage (repetitive peak) Re verse voltage (DC) ...
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Diodes Electrical characteristic curves (Ta=25°C) 100 Ta=125℃ Ta=75℃ 10 Ta=25℃ 1 Ta=-25℃ 0.1 0.01 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 470 Ta=25℃ IF=100mA 460 n=30pcs 450 440 430 AVE:439.5mV 420 VF DISPERSION MAP 20 18 Ta=25℃ ...
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Diodes 0.1 0.08 DC D=1/2 0.06 Sin(θ＝180) 0.04 0. 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0 0. D=t/T 0.2 DC VR=15V T Tj=125℃ 0.15 D=1/2 0.1 0.05 Sin(θ＝180 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...