RB160L-90TE25 Rohm Semiconductor, RB160L-90TE25 Datasheet
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Manufacturer Part Number
RB160L-90TE25
Description
DIODE SCHOTTKY 95V 1A PMDS
Manufacturer
Rohm Semiconductor
Specifications of RB160L-90TE25
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
730mV @ 1A
Voltage - Dc Reverse (vr) (max)
90V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
100µA @ 90V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SOD-106, PMDS
Repetitive Reverse Voltage Vrrm Max
95V
Forward Current If(av)
1A
Forward Voltage Vf Max
730mV
Forward Surge Current Ifsm Max
30A
Diode Case Style
SOD-106
No. Of Pins
2
Svhc
No SVHC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Part Number:
RB160L-90TE25
Diodes
Schottky barrier diode
RB160L-90
General rectification
1) Small power mold type.
2) Low I
3) High reliability
Silicon epitaxial planar
F
Reverse current
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperatuer
(*1) Mounted on epoxy board. 180°Half sine wave
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristic (Ta=25°C)
(PMDS)
orward voltage
Parameter
R
Parameter
Symbol
V
I
R
F
Min.
-
-
ROHM : PMDS
JEDEC : SOD-106
External dimensions (Unit : mm)
Taping dimensions (Unit : mm)
①
1.5±0.2
2.6±0.2
①
4
2.9±0.1
②
4
Typ.
②
-
-
Symbol
4.0±0.1
Tstg
V
I
V
FSM
Manufacture Date
Io
Tj
RM
R
Max.
0.73
2.0±0.05
100
4.0±0.1
2.0±0.2
Unit
µA
-40 to +150
V
0.1±0.02
0.1
Limits
150
95
90
30
1
φ1.55±0.05
I
V
F
=1.0A
R
=90V
φ1.55
Conditions
Land size figure (Unit : mm)
PMDS
Structure
Unit
℃
℃
2.0
V
V
A
A
RB160L-90
0.3
2.8MAX
1/3
Related parts for RB160L-90TE25
RB160L-90TE25 Summary of contents
... Limits Symbol FSM Tj -40 to +150 Tstg Min. Typ. Max. Unit - - 0. 100 µA RB160L-90 Land size figure (Unit : mm) 2.0 PMDS Structure 0.3 φ1.55±0.05 φ1.55 2.8MAX Unit 150 ℃ ℃ Conditions I =1. =90V R 1/3 ...
... Irr=0.25* AVE:7.40ns trr DISPERSION MAP 1000 IM=10mA IF=0.5A 1ms time 100 300us 10 1 0.1 0.001 0.01 0 100 TIME:t(s) Rth-t CHARACTERISTICS RB160L-90 1000 100 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 190 Ta=25℃ VR=100V 180 n=30pcs 170 160 150 140 AVE:149.6pF 130 120 ...
... ESD DISPERSION MAP 2 D=t/T VR=45V 2 Tj=150℃ 1.5 D=1/2 1 Sin(θ=180) 0 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) RB160L- 2.5 t D=t/T VR=45V Tj=150℃ 1.5 D=1/2 1 Sin(θ=180) 0 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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