RB160L-60TE25 Rohm Semiconductor, RB160L-60TE25 Datasheet
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Manufacturer Part Number
RB160L-60TE25
Description
DIODE SCHOTTKY 60V 1A SOD-106 TR
Manufacturer
Rohm Semiconductor
Specifications of RB160L-60TE25
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
580mV @ 1A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
1mA @ 60V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SOD-106, PMDS
Repetitive Reverse Voltage Vrrm Max
60V
Forward Current If(av)
1A
Forward Voltage Vf Max
580mV
Forward Surge Current Ifsm Max
30A
Diode Case Style
SOD-106
No. Of Pins
2
Svhc
No SVHC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Part Number:
RB160L-60TE25
Part Number:
RB160L-60TE25
Diodes
Schottky barrier diode
RB160L-60
General rectification
1) Small power mold type. (PMDS)
2) Low I
3) High reliability.
Silicon epitaxial planar
Forward voltage
R
R
Revers e voltage (DC)
A
F
J
S
(
*1) Mounted on epoxy board. 180 ° Half s ine wave
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
unction tem perature
Electrical characteristics (Ta=25°C)
verage rectified forward current
orward current s urge peak ( 60Hz ・ 1cyc )
evers e current
torage tem perature
evers e voltage (repetitive peak)
R
.
Param eter
Param eter
ROHM : PMDS
J
EDEC : SOD-106
Sym bol
External dimensions (Unit : mm)
①
1.5±0.2
Taping specifications (Unit : mm)
2.6±0.2
Sym bol
①
4
V
I
Ts tg
V
I
R
F
FSM
V
Io
Tj
2.9±0.1
RM
R
②
4
②
4.0±0.1
Min.
Manufacture Date
-
-
2.0±0.05
-40 to +125
4.0±0.1
Typ.
Lim its
125
-
-
60
60
30
2.0±0.2
1
Max.
0.58
0.1±0.02
0.1
1
φ1.55±0.05
Unit
m A
V
Unit
℃
℃
V
V
A
A
φ1.55
Structure
Land size figure (Unit : mm)
I
V
PMDS
F
R
=1.0A
=60V
2.0
Conditions
Rev.B
RB160L-60
0.3
2.8MAX
1/3
Related parts for RB160L-60TE25
RB160L-60TE25 Summary of contents
... Lim its Sym bol FSM 125 Tj -40 to +125 Ts tg Sym bol Min. Typ. Max 0. RB160L-60 Land size figure (Unit : mm) 2.0 PMDS Structure 0.3 φ1.55±0.05 φ1.55 2.8MAX Unit ℃ ℃ Unit Conditions V I =1. =60V R Rev.B 1/3 ...
... AVE:11.7ns 5 0 trr DISPERSION MAP 1000 Mounted on epoxy board Rth(j-a) 100 Rth(j-c) 10 IM=10mA IF=0.5A 1 1ms time 300us 0.1 100 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS RB160L-60 1000 f=1MHz 100 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 Ta=25℃ f=1MHz 190 VR=0V n=10pcs 180 170 160 AVE:192 ...
... ESD DISPERSION MAP D=t/T DC VR=30V 2 Tj=125℃ T 1.5 D=1/2 1 0.5 Sin(θ=180 100 20 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) RB160L- 2 D=t/T DC VR=30V 2 T Tj=125℃ 1.5 D=1/2 1 0.5 Sin(θ=180) 0 125 100 CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc) Rev ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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