STTH302S STMicroelectronics, STTH302S Datasheet - Page 4

• Manufacturer Part Number: STTH302S
• Description: DIODE ULT FAST 3A 200V SMC
• Manufacturer: STMicroelectronics

Specifications of STTH302S

• Voltage - Forward (vf) (max) @ If: 950mV @ 3A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 3µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.95 V
• Recovery Time: 35 ns
• Forward Continuous Current: 3 A
• Max Surge Current: 100 A
• Reverse Current Ir: 3 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5230-2; STTH302S

STTH302S
Fig. 9: Relative variations of dynamic parameters
versus junction temperature.
3.5
3.0
2.5
2.0
1.5
1.0
4/5
Fig. 7: Peak reverse recovery current versus
dI
6.0
5.0
4.0
3.0
2.0
1.0
0.0
F
25
1
I
/dt (90% confidence).
I
RM
RM
; t
V
(A)
R
dI
I
F
=100V
RR
=3A
F
/dt=200A/µs
V
R
I
; Q
F
=100V
=3A
50
RR
[Tj] / I
RM
10
75
; t
RR
; Q
RR
[Tj = 25°C]
100
T
j
=125°C
dI /dt(A/µs)
Tj(°C)
F
100
125
T
j
=25°C
Q
RR
t
I
RR
RM
150
1000
175
Fig. 10: Thermal resistance junction to ambient
versus copper surface under each lead (epoxy
FR4, e = 35µm).
Fig. 8: Reverse recovery charges versus dI
(90% confidence).
100
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0.0
1
Q
Rth(j-a)(°C/W)
RR
V
R
I
(nC)
F
=100V
=3A
0.5
1.0
1.5
10
2.0
S(cm²)
2.5
T
j
=125°C
3.0
dI /dt(A/µs)
T
100
j
=25°C
F
3.5
4.0
4.5
F
1000
/dt
5.0