BYT30G-400 STMicroelectronics, BYT30G-400 Datasheet
BYT30G-400
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BYT30G-400 Summary of contents
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... Average forward current F(AV) I Surge non repetitive forward current FSM I Repetitive peak forward current FRM Tstg Storage and junction temperature range Tj October 1999 - Ed 400 1.4 V Parameter Tc=100 C = 0.5 tp=10ms sinusoidal kHz BYT30G-400 1 & PAK (Plastic) Value Unit 400 350 A 280 150 ...
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... BYT30G-400 THERMAL RESISTANCE Symbol Rth (j-c) Junction to case STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter I * Reverse leakage current R V Forward voltage drop F ** Pulse test : * ms, < 380 s, < evaluate the conduction losses use the following equation : 1 0.0095 I F(AV) F (RMS) RECOVERY CHARACTERISTICS Symbol Parameter t Reverse recovery ...
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... 0 0.2 I FM(A) 0.1 10 100 0.001 Fig.6 : Average current versus ambient tempera- ture 0.5) I F(av)( Tc= Tc= Tc=100 0 BYT30G-400 P=20W P=30W P=40W Zth(j-c) (tp. ) Rth(j- Single pulse tp(s) 0.01 0.1 Rth(j-a)=Rth(j-c) =0.5 T =tp Rth(j-a)=15 C/W Tamb 100 120 =tp =tp/T ...
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... BYT30G-400 Fig.7 : Reverse recovery charge versus dI Fig.9 : Peak reverse current versus dI Fig.11: Dynamic parameters versus junction tem- perature. 4/5 /dt. Fig.8 : Forward recovery times versus dI F Fig.10 : Peak forward voltage versus dI /dt. F /dt. F /dt. F ...
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... REF 5.08 1.30 3.70 STMicroelectronics GROUP OF COMPANIES http://www.st.com BYT30G-400 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1 ...