CSD02060G Cree Inc, CSD02060G Datasheet - Page 2

DIODE SCHOTTKY 600V 2A TO263-2

CSD02060G

Manufacturer Part Number
CSD02060G
Description
DIODE SCHOTTKY 600V 2A TO263-2
Manufacturer
Cree Inc
Datasheet

Specifications of CSD02060G

Package / Case
D²Pak, TO-263 (2 leads + tab)
Voltage - Forward (vf) (max) @ If
1.8V @ 2A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
3.5A
Current - Reverse Leakage @ Vr
200µA @ 600V
Diode Type
Silicon Carbide Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
120pF @ 0V, 1MHz
Mounting Type
Surface Mount
Termination Type
SMD
Junction Temperature, Tj Max
175°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Note:
1.
Typical Performance
Electrical Characteristics
Thermal Characteristics
2
Symbol
Symbol
This is a majority carrier diode, so there is no reverse recovery charge.
R
R
0
Q
V
I
C
θJC
θJA
R
F
4
3
2
1
0
C
CSD02060 Rev. G
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
0.5 1.5 2.0 2.5 3.0 3.5 4.0
Figure 1. Forward Characteristics
Parameter
Typ.
100
120
1.6
2.0
50
20
15
7
Max.
1000
Typ.
200
1.8
2.4
4.7
53
200
180
160
140
120
100
0
80
60
40
20
0
Unit
°C/W
°C/W
Unit
nC
μA
pF
V
Figure 2. Reverse Characteristics
200 400 600 800
I
I
V
V
V
di/dt = 500 A/μs
T
V
V
V
F
F
R
R
R
J
R
R
R
= 25°C
= 2 A T
= 2 A T
= 600 V, I
= 0 V, T
= 200 V, T
= 400 V, T
= 600 V T
= 600 V T
Test Conditions
J
J
=25°C
=175°C
J
= 25°C, f = 1 MHz
F
J
J
J
J
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
=25°C
=175°C
= 2A
Note

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