SIDC56D120E6 Infineon Technologies, SIDC56D120E6 Datasheet - Page 2

• Manufacturer Part Number: SIDC56D120E6
• Description: DIODE FAST SW 1200V 75A WAFER
• Manufacturer: Infineon Technologies

Specifications of SIDC56D120E6

• Voltage - Forward (vf) (max) @ If: 1.9V @ 75A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 75A (DC)
• Current - Reverse Leakage @ Vr: 27µA @ 1200V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: Wafer
• Packages: --
• Technology: Emitter Controlled Diode
• Vds (max): 1,200.0 V
• If (max): 75.0 A
• If,sm (max): 150.0 A
• Vf (typ): 1.9 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: SP000011950

Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current limited by
T
Single pulse forward current
(depending on wire bond configuration)
Maximum repetitive forward current
limited by T
Operating junction and storage
temperature
Static Electrical Characteristics
Parameter
Reverse leakage current
Cathode-Anode
breakdown Voltage
Forward voltage drop
Dynamic Electrical Characteristics
Parameter
Reverse recovery time
Peak recovery current
Reverse recovery charge
Peak rate of fall of reverse
recovery current
Softness
Edited by INFINEON Technologies AI PS DD HV3, L 4222P, Edition 1, 8.01.2002
jmax
jmax
I
V
V
t
t
I
I
Q
Q
di
di
S 1
S 2
Symbol
Symbol
R
r r 1
r r 2
R R M 1
R R M 2
B r
F
r r 1
r r 2
r r 1
r r 2
/dt
/dt
Symbol
V
I
I
I
T
V
I
I
I
di/dt=1950A/ s
V
I
di/dt=1950A/ s
V
I
di/dt=1950A/ s
V
I
di/dt=1950A/ s
V
I
di/dt=1950A/ s
V
F
F S M
FRM
F
F
F
F
F
R
F
j
R
R
R
R
R
R R M
=75A
=75A
=75A
=75A
=75A
R
(tested on chip), T j =25 C, unless otherwise specified
= 7 5 A
= 4 m A
=600V
= 6 0 0 V
= 6 0 0 V
= 6 0 0 V
= 6 0 0 V
, T
= 1 2 0 0 V
, at T
s t g
Preliminary
Conditions
Conditions
j
= 25 C, unless otherwise specified, tested at component
t
P
T
T
T
T
T
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
j
j
j
j
j
= 10 ms sinusoidal
= 2 5 C
= 2 5 ° C
= 2 5 C
= 2 5 C
= 1 2 5 C
= 25 C
= 1 2 5 C
= 2 5 C
= 1 2 5 C
= 2 5 ° C
= 1 2 5 ° C
= 2 5 ° C
= 1 2 5 ° C
Condition
SIDC56D120E6
min.
min.
1200
Typ.
Typ.
Value
Value
16.44
88.5
8.77
110
1.9
tbd
tbd
tbd
-55...+150
Value
1200
150
tbd
75
max.
max.
27
Unit
V
A
Unit
µA
V
V
Unit
ns
A
µ C
A / s
1
C