SIDC81D120E6 Infineon Technologies, SIDC81D120E6 Datasheet

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SIDC81D120E6

Manufacturer Part Number
SIDC81D120E6
Description
DIODE FAST SW 1200V 100A WAFER
Manufacturer
Infineon Technologies
Datasheet

Specifications of SIDC81D120E6

Voltage - Forward (vf) (max) @ If
1.9V @ 100A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
100A (DC)
Current - Reverse Leakage @ Vr
27µA @ 1200V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
Wafer
Packages
--
Technology
Emitter Controlled Diode
Vds (max)
1,200.0 V
If (max)
100.0 A
If,sm (max)
200.0 A
Vf (typ)
1.9 V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Other names
SP000011952
Fast switching diode chip in EMCON-Technology
FEATURES:
Chip Type
SIDC81D120E6
MECHANICAL PARAMETER:
Raster size
Area total / active
Anode pad size
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Anode metallisation
Cathode metallisation
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
Edited by INFINEON Technologies AI PS DD HV3, L 4202P, Edition 1, 8.01.2002
1200V EMCON technology 130 µm chip
soft, fast switching
low reverse recovery charge
small temperature coefficient
V
1200V 100A
R
I
F
Die Size
Preliminary
This chip is used for:
Applications:
9 x 9 mm
EUPEC power modules and
discrete devices
SMPS, resonant applications,
drives
suitable for epoxy and soft solder die bonding
< 6 month at an ambient temperature of 23°C
store in original container, in dry nitrogen,
2
electrically conductive glue or solder
1400 nm Ni Ag –system
8.28 x 8.28
81 / 69.39
Package
0.65mm ; max 1.2mm
SIDC81D120E6
sawn on foil
9 x 9
3200 nm AlSiCu
130
150
180
Al, 500µm
Photoimide
169 pcs
Ordering Code
Q67050-A4128-
A001
A
C
mm
mm
deg
µm
2

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SIDC81D120E6 Summary of contents

Page 1

... SMPS, resonant applications, drives I Die Size suitable for epoxy and soft solder die bonding electrically conductive glue or solder store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C SIDC81D120E6 A C Package Ordering Code Q67050-A4128- sawn on foil A001 69.39 8.28 x 8.28 ...

Page 2

... C, unless otherwise specified, tested at component j Conditions ° di/dt=2600A ° =600V ° di/dt=2600A ° di/dt=2600A / di/dt=2600A di/dt=2600A SIDC81D120E6 Value Unit 1200 V 100 A tbd 200 -55...+150 C Value Unit min. Typ. max. 27 µA 1200 V 1.9 V Value Unit min. Typ. max. tbd ns 120 A 150 11.93 µ C 21.94 tbd tbd 1 ...

Page 3

... CHIP DRAWING: Edited by INFINEON Technologies HV3, L 4202P, Edition 1, 8.01.2002 Preliminary SIDC81D120E6 ...

Page 4

... Life support devices or systems are intended to be implanted in the human body support and / or maintain and sustain and / or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies HV3, L 4202P, Edition 1, 8.01.2002 Preliminary SIDC81D120E6 INFINEON TECHNOLOGIES / EUPEC tbd ...

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