MBR130LSFT1G ON Semiconductor, MBR130LSFT1G Datasheet - Page 2

DIODE SCHOTTKY 1A 30V SOD-123FL

MBR130LSFT1G

Manufacturer Part Number
MBR130LSFT1G
Description
DIODE SCHOTTKY 1A 30V SOD-123FL
Manufacturer
ON Semiconductor
Datasheet

Specifications of MBR130LSFT1G

Voltage - Forward (vf) (max) @ If
380mV @ 1A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
1mA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SOD-123 Flat Leads
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
1 A
Max Surge Current
40 A
Configuration
Single
Forward Voltage Drop
0.38 V
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
- 55 C to + 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBR130LSFT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR130LSFT1G
Manufacturer:
ON Semiconductor
Quantity:
26 348
Company:
Part Number:
MBR130LSFT1G,,23400,SOD-123F,ON
0
Company:
Part Number:
MBR130LSFT1G,,23400,SOD-123F,ON
0
Company:
Part Number:
MBR130LSFT1G,,3000,SOD123,ON
0
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current (At Rated V
Peak Repetitive Forward Current
Non−Repetitive Peak Surge Current
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated V
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
Maximum Instantaneous Forward Voltage (Note 3)
Maximum Instantaneous Reverse Current (Note 3)
(I
(I
(I
(V
Working Peak Reverse Voltage
DC Blocking Voltage
(At Rated V
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
F
F
F
R
= 0.1 A)
= 0.7 A)
= 1.0 A)
= 30 V)
R
, Square Wave, 100 kHz, T
R
, T
Rating
J
= 25°C)
L
= 110°C)
R
, T
2
).
L
= 117°C)
http://onsemi.com
MBR130LSFT1
2
Symbol
V
V
dv/dt
I
I
V
T
R
R
I
FRM
FSM
RWM
V
R
R
RRM
R
T
I
stg
F
O
tja
tja
R
J
tjl
tjl
T
T
J
J
0.29
0.36
0.38
= 25°C
= 25°C
1.0
−55 to 150
−55 to 125
10,000
Value
325
1.0
2.0
30
40
26
21
82
T
T
J
J
= 100°C
= 100°C
0.18
0.27
0.30
25
°C/W
mA
Unit
V/ms
V
°C
°C
V
A
A
A