MBR130LSFT1G ON Semiconductor, MBR130LSFT1G Datasheet - Page 4

DIODE SCHOTTKY 1A 30V SOD-123FL

MBR130LSFT1G

Manufacturer Part Number
MBR130LSFT1G
Description
DIODE SCHOTTKY 1A 30V SOD-123FL
Manufacturer
ON Semiconductor
Datasheet

Specifications of MBR130LSFT1G

Voltage - Forward (vf) (max) @ If
380mV @ 1A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
1mA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SOD-123 Flat Leads
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
1 A
Max Surge Current
40 A
Configuration
Single
Forward Voltage Drop
0.38 V
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
- 55 C to + 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBR130LSFT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR130LSFT1G
Manufacturer:
ON Semiconductor
Quantity:
26 348
Company:
Part Number:
MBR130LSFT1G,,23400,SOD-123F,ON
0
Company:
Part Number:
MBR130LSFT1G,,23400,SOD-123F,ON
0
Company:
Part Number:
MBR130LSFT1G,,3000,SOD123,ON
0
1000
100
1000
10
100
0.1
10
1
0
0.000001
5
V
0.00001
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
0.05
0.01
D = 0.5
0.2
0.1
10
SINGLE PULSE
0.0001
15
20
0.001
TYPICAL CHARACTERISTICS
Figure 9. Thermal Response
T
Test Type > Min Pad < Die Size 38x38 @ 75% mils
25
J
= 25 °C
http://onsemi.com
MBR130LSFT1
t
1
0.01
, TIME (sec)
30
4
125
120
105
100
115
110
95
90
85
80
75
70
65
0
0.1
R
qJA
Figure 8. Typical Operating Temperature
2
R
= 235 °C/W
qJA
V
4
R
= 324.9 °C/W
, DC REVERSE VOLTAGE (VOLTS)
1
6
8
Derating
R
qJA
10
10
R
= 400 °C/W
qJA
P
DUTY CYCLE, D = t
12
(pk)
= 130 °C/W
qJA = 321.8 °C/W
R
14
qJA
100
t
1
t
= 25.6 °C/W
2
16
1
/t
18
2
1000
20