HGTG30N60C3D Fairchild Semiconductor, HGTG30N60C3D Datasheet - Page 6
![IGBT N-CH UFS 600V 30A TO-247](/photos/5/31/53163/261-to-247_sml.jpg)
HGTG30N60C3D
Manufacturer Part Number
HGTG30N60C3D
Description
IGBT N-CH UFS 600V 30A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet
1.HGTG30N60C3D.pdf
(8 pages)
Specifications of HGTG30N60C3D
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 30A
Current - Collector (ic) (max)
63A
Power - Max
208W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Type
IGBT
Dc Collector Current
63A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
208W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HGTG30N60C3D
Manufacturer:
FSC
Quantity:
10 000
©2009 Fairchild Semiconductor Corporation
Typical Performance Curves
0.01
500
100
0.1
10
10
10
1
10
1
-1
-2
10
0
*Notes:
Collector-Emitter Voltage, V
-5
1. T
2. T
3. Single Pulse
0.05
0.02
0.01
0.5
Figure 17. SOA Characteristics
0.2
0.1
C
J
= 150
= 25
o
C
o
C
10
Figure 18. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
SINGLE PULSE
10
-4
100
10ms
DC
1ms
100
(continued)
µ
10
s
CE
µ
s
[V]
10
t
-3
1
1000
, RECTANGULAR PULSE DURATION (s)
HGTG30N60C3D
10
-2
10
-1
DUTY FACTOR, D = t
PEAK T
J
= (P
P
D
D
X Z
10
θJC
0
t
1
1
t
/ t
X R
2
2
θJC
HGTG30N60C3D Rev. B
) + T
C
10
1