HGTG30N60C3D Fairchild Semiconductor, HGTG30N60C3D Datasheet - Page 6

• Manufacturer Part Number: HGTG30N60C3D
• Description: IGBT N-CH UFS 600V 30A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG30N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 30A
• Current - Collector (ic) (max): 63A
• Power - Max: 208W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 63A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 208W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2009 Fairchild Semiconductor Corporation
Typical Performance Curves
0.01
500
100
0.1
10
10
10
1
10
1
-1
-2
10
0
*Notes:
Collector-Emitter Voltage, V
-5
1. T
2. T
3. Single Pulse
0.05
0.02
0.01
0.5
Figure 17. SOA Characteristics
0.2
0.1
C
J
= 150
= 25
o
C
o
C
10
Figure 18. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
SINGLE PULSE
10
-4
100
10ms
DC
1ms
100
(continued)
µ
10
s
CE
µ
s
[V]
10
t
-3
1
1000
, RECTANGULAR PULSE DURATION (s)
HGTG30N60C3D
10
-2
10
-1
DUTY FACTOR, D = t
PEAK T
J
= (P
P
D
D
X Z
10
θJC
0
t
1
1
t
/ t
X R
2
2
θJC
HGTG30N60C3D Rev. B
) + T
C
10
1