IRG4BC40FPBF International Rectifier, IRG4BC40FPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4BC40FPBF
• Description: IGBT FAST 600V 49A TO220AB
• Manufacturer: International Rectifier
• Type: Fastr

Specifications of IRG4BC40FPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 27A
• Current - Collector (ic) (max): 49A
• Power - Max: 160W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Capacitance, Gate: 2200 pF
• Current, Collector: 49 A
• Energy Rating: 15 mJ
• Package Type: TO-220AB
• Polarity: N-Channel
• Power Dissipation: 160 W
• Resistance, Thermal, Junction To Case: 0.77 °C/W
• Speed, Switching: 1 to 5 kHz (Hard Switching), >20 kHz (Resonant Mode)
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 1.85 V
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 49A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 49A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 160W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4BC40FPBF

Notes:
Q
R
S
Electrical Characteristics @ T
Switching Characteristics @ T
V
V
∆V
V
V
∆V
g
I
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
CES
GES
d(on)
d(off)
f
d(on)
d(off)
f
r
r
fe
E
(BR)CES
(BR)ECS
on
off
ts
CE(ON)
GE(th)
ts
ies
oes
res
g
gc
ge
(BR)CES
GE(th)
2
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
CC
/∆T
= 80%(V
/∆T
J
J
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CES
), V
GE
GE
= 20V, pulse width limited by
= 20V, L = 10µH, R
J
J
= 25°C (unless otherwise specified)
G
= 25°C (unless otherwise specified)
= 10Ω,
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
9.2
18
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2200
T
U
1.85
1.56
0.37
1.81
2.18
0.70
1.50
100
240
170
380
310
140
-12
3.9
7.5
—
—
—
12
—
—
—
—
15
35
26
18
25
21
29
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
1000
±100
250
150
360
250
1.7
6.0
2.0
2.8
—
—
—
—
—
—
—
23
53
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
µA
ns
nA
nC
mJ
mJ
nH
ns
pF
V
V
V
S
V
V
V
V
V
V
V
V
V
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 10, 11, 13, 14
T
I
V
Energy losses include "tail"
See Fig. 13, 14
Measured 5mm from package
V
V
ƒ = 1.0MHz
C
C
C
I
I
I
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
J
J
C
CC
GE
GE
GE
GE
CC
C
C
= 27A
= 25°C
= 27A, V
= 150°C,
= 27A, V
= 27A , T
= 27A
= 49A
= V
= V
= 100V, I
= 0V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V, R
= 15V, R
= 0V
= 15V
= 30V
GE
GE
Conditions
Conditions
, I
, I
C
C
C
CE
C
C
CE
CE
CC
CC
J
= 250µA
= 1.0A
= 1.0mA
= 150°C
C
= 250µA
= 250µA
G
G
= 600V, T
= 10V, T
= 600V
= 480V
= 480V
= 27A
= 10Ω
= 10Ω
See Fig. 8
See Fig. 7
J
J
= 25°C
V
See Fig.2, 5
= 150°C
www.irf.com
GE
= 15V