STGB30NC60WT4 STMicroelectronics, STGB30NC60WT4 Datasheet - Page 4

• Manufacturer Part Number: STGB30NC60WT4
• Description: IGBT UFAST 60A 600V D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB30NC60WT4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-8779-2

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 4.
1. Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
V
V
CASE
(BR)CES
g
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
fs
Q
oes
ies
res
ge
gc
(1)
g
=25°C unless otherwise specified)
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static electrical characteristics
Dynamic electrical characteristics
GE
GE
= 0)
= 0)
Parameter
Parameter
CE
= 0)
STGB30NC60WT4 - STGP30NC60W - STGW30NC60W
I
V
V
V
V
V
V
C
V
V
V
V
(see Figure 17)
GE
GE
CE
CE
CE
GE
CE
= 1 mA
GE
GE
CE
CE
= V
=15 V, I
=15 V, I
= 600 V
= 600 V, Tc=125 °C
= ±20 V
= 15 V
=0
= 25 V, f = 1 MHz,
= 390 V, I
= 15 V,
Test conditions
GE
Test conditions
, I
,
C
C
C
I
C
= 20 A
= 20 A,Tc= 125 °C
= 250 µA
= 20 A
C
= 20 A,
Min.
Min.
3.75
600
2080
Typ.
17.5
175
102
52
47
Typ.
2.1
1.8
15
Max.
± 100
Max. Unit
5.75
2.5
10
1
Unit
nC
nC
nC
pF
pF
pF
mA
µA
nA
V
V
V
V
S