IXGR40N60C2D1 IXYS, IXGR40N60C2D1 Datasheet
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Manufacturer Part Number
IXGR40N60C2D1
Description
IGBT 600V 56A 170W ISOPLUS247
Specifications of IXGR40N60C2D1
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 30A
Current - Collector (ic) (max)
56A
Power - Max
170W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
56A
Gate To Emitter Voltage (max)
±20V
Package Type
ISOPLUS 247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
56
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
26
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
32
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.2
Rthjc, Max, Igbt, (°c/w)
0.74
If, Tj=110°c, Diode, (a)
50
Rthjc, Max, Diode, (ºc/w)
1.5
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IXGR40N60C2D1
HiPerFAST
ISOPLUS247
C2-Class High Speed IGBTs
© 2004 IXYS All rights reserved
(Electrically Isolated Back Surface)
Symbol
BV
V
I
I
V
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
V
Weight
GES
CM
CES
C25
C110
D110
JM
GE(th)
CE(sat)
GEM
J
stg
CES
CGR
GES
C
ISOL
CES
Test Conditions
I
I
V
V
V
I
Test Conditions
T
T
Continuous
Transient
T
T
T
T
V
Clamped inductive load @ V
T
50/60 Hz RMS, t = 1m
C
C
C
CE
GE
CE
C
C
C
C
GE
C
J
J
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 110°C (40N60C2D1)
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250μA, V
= 250 μA, V
= V
= 0 V
= 0 V, V
= 30 A, V
CES
TM
GE
TM
VJ
GE
IGBT
= ±20 V
= 125°C, R
GE
= 15 V
CE
= 0 V
= V
GE
GE
= 1 MΩ
G
= 10 Ω
40N60C2
40N60C2/D1
T
T
(T
CE
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
≤ 600 V
IXGR 40N60C2
IXGR 40N60C2D1
min.
600
3.0
IXGR_C2
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
I
CM
typ.
2.2
2.0
600
600
±20
±30
= 80
200
170
150
300
2500
56
26
27
4
max.
±100
IXGR_C2D1
100
5.0
2.7
50
μA
μA
nA
°C
°C
°C
°C
V
W
V
V
V
V
V
V
V
V
A
A
A
A
A
g
ISOPLUS 247
(IXGR)
Features
Applications
Advantages
G = Gate
E = Emitter
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOS
MOS Gate turn-on
- drive simplicity
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
V
I
V
t
C25
fi(typ)
CE(SAT)
CES
G
C
E
TM
C = Collector
= 56 A
= 600 V
= 2.7 V
= 32 ns
DS99052B(09/03)
ISOLATED TAB
TM
process
Related parts for IXGR40N60C2D1
IXGR40N60C2D1 Summary of contents
... GE = 250 μ GE(th CES CE CES ± GES CE(sat © 2004 IXYS All rights reserved IXGR 40N60C2 IXGR 40N60C2D1 IXGR_C2 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 200 = 10 Ω ≤ 600 V CE 170 -55 ... +150 150 -55 ... +150 300 2500 4 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... DCB substrate thJ-DCB the thermal resistance junction-to-external side of DCB substrate thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... V - Volts C E Fig. 3. Output Characteristics @ 125 Deg 0 Volts CE Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emiiter voltage 4 3 60A Volts G E © 2004 IXYS All rights reserved 2 0.9 0.8 5V 0.7 0 º 30A IXGR 40N60C2 IXGR 40N60C2D1 Fig. 2. Extended Output Characteristics @ 25 deg ...
... I - Amperes C Fig. 11. Gate Charge 300V 30A 0mA nanoCoulombs IXYS reserves the right to change limits, test conditions, and dimensions. G IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 0.8 0.6 0.4 0 Fig. 10. Dependence of E off 0.8 0.6 0.4 0.2 ...
... IXYS All rights reserved Fig. 13. Maximum Transient Thermal Resistance 1 0 Pulse Width - milliseconds IXGR 40N60C2 IXGR 40N60C2D1 000 ...
... Fig. 20. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 1000 T = 100° 300V nC ...
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