IXGR40N60C2D1 IXYS, IXGR40N60C2D1 Datasheet - Page 2

• Manufacturer Part Number: IXGR40N60C2D1
• Description: IGBT 600V 56A 170W ISOPLUS247
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGR40N60C2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 30A
• Current - Collector (ic) (max): 56A
• Power - Max: 170W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 56A
• Gate To Emitter Voltage (max): ±20V
• Package Type: ISOPLUS 247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 56
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 26
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 32
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.2
• Rthjc, Max, Igbt, (°c/w): 0.74
• If, Tj=110°c, Diode, (a): 50
• Rthjc, Max, Diode, (ºc/w): 1.5
• Package Style: ISOPLUS247™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
R
Reverse Diode (FRED) (D1 Version Only)
Symbol
V
I
t
t
R
R
Notes:
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
RM
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
rr
rr
fs
off
on
off
thJC
F
thJC
ies
oes
res
g
ge
gc
thJ-DCB
thCS
thCS
1. R
2. R
thJ-DCB
thJC
is the thermal resistance junction-to-external side of DCB substrate
is the thermal resistance junction-to-internal side of DCB substrate
Test Conditions
I
Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
V
I
(Note 1)
(Note 2)
Test Conditions
I
t ≤ 300 μs, duty cycle d ≤ 2 %
I
V
I
Inductive load, T
I
V
Inductive load, T
I
V
C
C
F
F
F
C
C
CE
R
CE
= 30 A, V
CE
= 30 A; V
= 30 A, V
= 30 A, V
= 1 A; -di/dt = 100 A/μs; V
= 30 A, V
= 30 A, V
= 100 V
= 25 V, V
= 400 V, R
= 400 V, R
GE
CE
GE
GE
GE
GE
GE
= 10 V,
= 0 V, -di
= 15 V, V
= 15 V
= 0 V, Pulse test
= 15 V
G
G
= 0 V, f = 1 MHz
4,835,592
4,850,072
4,881,106
= R
= R
J
J
= 125° ° ° ° ° C
= 25° ° ° ° ° C
off
off
= 3 Ω
= 3 Ω
F
CE
/dt =100 A/μs, T
= 0.5 V
4,931,844
5,017,508
5,034,796
R
= 30 V
(T
(T
J
CES
J
= 25°C unless otherwise specified)
40N60C2
= 25°C unless otherwise specified)
40N60C2D1
5,049,961
5,063,307
5,187,117
40N60C2
40N60C2D1
Characteristic Values
T
T
J
J
J
= 100°C
=150°C
= 25°C
5,237,481
5,381,025
5,486,715
min.
min.
20
Characteristic Values
2500
0.20
0.50
0.26
0.15
0.15
180
220
130
100
typ.
typ.
0.3
0.6
36
54
95
14
36
18
20
90
32
18
20
80
25
6,162,665
6,259,123 B1
6,306,728 B1
max.
max.
0.37 mJ
0.74 K/W
140
240
1.6
2.5
1.5 K/W
4
6,404,065 B1
6,534,343
6,583,505
K/W
K/W
K/W
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
pF
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
S
V
V
A
ISOPLUS 247 Outline
6,683,344
6,710,405B2
6,710,463
IXGR 40N60C2D1
6,727,585
6,759,692
6771478 B2
IXGR 40N60C2